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1. WO2022163602 - RESIST UNDERLAYER FILM-FORMING COMPOSITION CONTAINING POLYMER HAVING ALICYCLIC HYDROCARBON GROUP

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Publication Number WO/2022/163602
Publication Date 04.08.2022
International Application No. PCT/JP2022/002501
International Filing Date 25.01.2022
IPC
C08F 8/14 2006.1
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
8Chemical modification by after-treatment
14Esterification
C08F 220/16 2006.1
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
220Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide, or nitrile thereof
02Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
10Esters
12of monohydric alcohols or phenols
16of phenols or of alcohols containing two or more carbon atoms
C08F 220/26 2006.1
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
220Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide, or nitrile thereof
02Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
10Esters
26Esters containing oxygen in addition to the carboxy oxygen
G03F 7/004 2006.1
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
G03F 7/11 2006.1
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
09characterised by structural details, e.g. supports, auxiliary layers
11having cover layers or intermediate layers, e.g. subbing layers
H01L 21/027 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
027Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
CPC
C08F 220/16
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
220Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
02Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
10Esters
12of monohydric alcohols or phenols
16of phenols or of alcohols containing two or more carbon atoms
C08F 220/26
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
220Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
02Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
10Esters
26Esters containing oxygen in addition to the carboxy oxygen
C08F 8/14
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
8Chemical modification by after-treatment
14Esterification
G03F 7/004
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
G03F 7/11
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
09characterised by structural details, e.g. supports, auxiliary layers
11having cover layers or intermediate layers, e.g. subbing layers
H01L 21/027
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
Applicants
  • 日産化学株式会社 NISSAN CHEMICAL CORPORATION [JP]/[JP]
Inventors
  • 清水　祥 SHIMIZU Shou
  • 田村　護 TAMURA Mamoru
Agents
  • 特許業務法人　津国 TSUKUNI & ASSOCIATES
  • 山村　大介 YAMAMURA Daisuke
Priority Data
2021-01037626.01.2021JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) RESIST UNDERLAYER FILM-FORMING COMPOSITION CONTAINING POLYMER HAVING ALICYCLIC HYDROCARBON GROUP
(FR) COMPOSITION DE FORMATION DE FILM DE SOUS-COUCHE DE RÉSERVE CONTENANT UN POLYMÈRE AYANT UN GROUPE HYDROCARBONÉ ALICYCLIQUE
(JA) 脂環式炭化水素基を有するポリマーを含むレジスト下層膜形成組成物
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Abstract
(EN) The present invention provides: a composition for forming a resist underlayer film that enables the formation of a desired resist pattern; a method for producing a resist pattern and a method for producing a semiconductor device, each of which uses the composition for forming a resist underlayer film. This composition for forming a resist underlayer film contains a polymer and a solvent, said polymer comprising a unit structure (A) represented by formula (1) [in formula (1): R1 represents a hydrogen atom or an alkyl group having 1-6 carbon atoms; and L1 represents an optionally substituted aliphatic ring, an aryl group having 6-40 carbon atoms or a hetero ring] and a unit structure (B) that contains an aliphatic ring in a side chain and that is different from the unit structure (A).
(FR) La présente invention concerne : une composition de formation de film de sous-couche de réserve qui permet la formation d'un motif de réserve souhaité ; un procédé de production d'un motif de réserve et un procédé de fabrication d'un dispositif à semi-conducteur, chacun utilisant cette composition de formation de film de sous-couche de réserve. Cette composition de formation de film de sous-couche de réserve contient un polymère et un solvant, ledit polymère comprenant une structure unitaire (A) représentée par la formule (1) [dans la formule (1) : R1 représente un atome d'hydrogène ou un groupe alkyle ayant de 1 à 6 atomes de carbone ; et L1 représente un cycle aliphatique éventuellement substitué, un groupe aryle ayant 6 à 40 atomes de carbone ou un hétérocycle] et une structure unitaire (B) qui contient un cycle aliphatique dans une chaîne latérale et qui est différent de la structure unitaire (A).
(JA) 本発明は、所望のレジストパターンを形成できるレジスト下層膜を形成するための組成物、及び該レジスト下層膜形成組成物を用いたレジストパターン製造方法、半導体装置の製造方法を提供する。下記式（１）（式（１）中、Ｒ１は水素原子又は炭素原子数１～６のアルキル基を表し、Ｌ１は置換基で置換されていてもよい脂肪族環、炭素原子数６～４０のアリール基又は複素環を表す）で表される単位構造（Ａ）と、側鎖に脂肪族環を含み、単位構造（Ａ）とは異なる単位構造（Ｂ）とを含むポリマー、及び溶剤を含む、レジスト下層膜形成組成物である。
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