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1. WO2022163484 - TEMPERATURE CONTROL METHOD AND SUBSTRATE PROCESSING APPARATUS

Publication Number WO/2022/163484
Publication Date 04.08.2022
International Application No. PCT/JP2022/001940
International Filing Date 20.01.2022
IPC
H01L 21/3065 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
3065Plasma etching; Reactive-ion etching
CPC
H01L 21/3065
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
302to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
3065Plasma etching; Reactive-ion etching
Applicants
  • 東京エレクトロン株式会社 TOKYO ELECTRON LIMITED [JP]/[JP]
Inventors
  • 五十嵐 大 IGARASHI, Dai
Agents
  • 弁理士法人酒井国際特許事務所 SAKAI INTERNATIONAL PATENT OFFICE
Priority Data
2021-01418201.02.2021JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) TEMPERATURE CONTROL METHOD AND SUBSTRATE PROCESSING APPARATUS
(FR) PROCÉDÉ DE RÉGULATION DE TEMPÉRATURE ET APPAREIL DE TRAITEMENT DE SUBSTRAT
(JA) 温度制御方法及び基板処理装置
Abstract
(EN) A temperature control method comprising: acquiring a temperature TB of a temperature control medium prior to a temperature change during a plurality of processes n in which heat input is generated on a substrate placed on a placement surface of a stage, and a pressure Pn of a heat-transfer gas supplied to an ejection opening of the stage and a temperature TWn of the substrate for each of the processes n; after a temperature change, with the temperature of the temperature control medium being the temperature TB, acquiring, for each of the processes n, a temperature TW'n,max of the substrate when the pressure of the heat-transfer gas is reduced from the pressure Pn, and a temperature TW'n,min of the substrate when the pressure of the heat-transfer gas is reduced from the pressure Pn; adjusting the temperature of the temperature control medium to a temperature TB" satisfying expression (1); and, for each of the processes n, adjusting the pressure of the heat-transfer gas so that the temperature of the substrate becomes the temperature TWn. (1): TB+max(TWn-TW'n,max) ≦ TB" ≦ TB+min(TWn-TW'n,min)
(FR) Procédé de régulation de température consistant : à acquérir une température TB d'un milieu de régulation de température avant un changement de température pendant une pluralité de processus n pendant lesquels une entrée de chaleur est générée sur un substrat placé sur une surface de placement d'un étage, et une pression Pn d'un gaz de transfert de chaleur fournie à une ouverture d'éjection de l'étage et une température TWn du substrat pour chacun des processus n ; après un changement de température, la température du milieu de régulation de température étant la température TB, à acquérir, pour chacun des processus n, une température TW'n,max max du substrat lorsque la pression du gaz de transfert de chaleur est réduite par rapport à la pression Pn, et une température TW'n,min min du substrat lorsque la pression du gaz de transfert de chaleur est réduite par rapport à la pression Pn ; à régler la température du milieu de régulation de température à une température TB" satisfaisant l'expression (1) ; et pour chacun des processus n, à régler la pression du gaz de transfert de chaleur de sorte que la température du substrat devienne la température TWn. (1) : TB+max(TWn-TW'n,max) ≦ TB" ≦ TB+min(TWn-TW'n,min)
(JA) ステージの載置面に載置された基板に入熱が発生する複数のプロセスnを実施する際の温度変化前の温調媒体の温度TBと、プロセスnごとのステージの吐出口へ供給する伝熱ガスの圧力P及び基板の温度TWとを取得し、温度変化後に、温調媒体の温度を温度TBとして、プロセスnごとに、伝熱ガスの圧力を圧力Pよりも減少させた場合の基板の温度TW'n,maxと、伝熱ガスの圧力を圧力Pよりも増加させた場合の基板の温度TW'n,minとを取得し、温調媒体の温度を、以下の式(1)を満たす温度TB"に調整し、プロセスnごとに、基板の温度が温度TWとなるよう伝熱ガスの圧力を調整する。 TB+max(TW-TW'n,max) ≦ TB" ≦ TB+min(TW-TW'n,min) ・・・(1)
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