WO2022163484 TEMPERATURE CONTROL METHOD AND SUBSTRATE PROCESSING APPARATUS

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Publication Number WO/2022/163484

Publication Date 04.08.2022

International Application No. PCT/JP2022/001940

International Filing Date 20.01.2022

IPC

CPC

Applicants

東京エレクトロン株式会社 TOKYO ELECTRON LIMITED [JP]/[JP]

Inventors

五十嵐　大 IGARASHI, Dai

Agents

弁理士法人酒井国際特許事務所 SAKAI INTERNATIONAL PATENT OFFICE

Priority Data

2021-014182

01.02.2021

Publication Language Japanese (ja)

Filing Language Japanese (JA)

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Title

(EN) TEMPERATURE CONTROL METHOD AND SUBSTRATE PROCESSING APPARATUS

(FR) PROCÉDÉ DE RÉGULATION DE TEMPÉRATURE ET APPAREIL DE TRAITEMENT DE SUBSTRAT

(JA) 温度制御方法及び基板処理装置

Abstract

(EN) A temperature control method comprising: acquiring a temperature TB of a temperature control medium prior to a temperature change during a plurality of processes n in which heat input is generated on a substrate placed on a placement surface of a stage, and a pressure P_n of a heat-transfer gas supplied to an ejection opening of the stage and a temperature TW_n of the substrate for each of the processes n; after a temperature change, with the temperature of the temperature control medium being the temperature TB, acquiring, for each of the processes n, a temperature TW'_n,max of the substrate when the pressure of the heat-transfer gas is reduced from the pressure P_n, and a temperature TW'_n,min of the substrate when the pressure of the heat-transfer gas is reduced from the pressure P_n; adjusting the temperature of the temperature control medium to a temperature TB" satisfying expression (1); and, for each of the processes n, adjusting the pressure of the heat-transfer gas so that the temperature of the substrate becomes the temperature TW_n.　(1): TB+max(TW_n-TW'_n,max) ≦ TB" ≦ TB+min(TW_n-TW'_n,min)

(FR) Procédé de régulation de température consistant : à acquérir une température TB d'un milieu de régulation de température avant un changement de température pendant une pluralité de processus n pendant lesquels une entrée de chaleur est générée sur un substrat placé sur une surface de placement d'un étage, et une pression P_n d'un gaz de transfert de chaleur fournie à une ouverture d'éjection de l'étage et une température TW_n du substrat pour chacun des processus n ; après un changement de température, la température du milieu de régulation de température étant la température TB, à acquérir, pour chacun des processus n, une température TW'_n,max max du substrat lorsque la pression du gaz de transfert de chaleur est réduite par rapport à la pression P_n, et une température TW'_n,min min du substrat lorsque la pression du gaz de transfert de chaleur est réduite par rapport à la pression P_n ; à régler la température du milieu de régulation de température à une température TB" satisfaisant l'expression (1) ; et pour chacun des processus n, à régler la pression du gaz de transfert de chaleur de sorte que la température du substrat devienne la température TW_n.　(1) : TB+max(TW_n-TW'_n,max) ≦ TB" ≦ TB+min(TW_n-TW'_n,min)

(JA) ステージの載置面に載置された基板に入熱が発生する複数のプロセスｎを実施する際の温度変化前の温調媒体の温度ＴＢと、プロセスｎごとのステージの吐出口へ供給する伝熱ガスの圧力Ｐ_ｎ及び基板の温度ＴＷ_ｎとを取得し、温度変化後に、温調媒体の温度を温度ＴＢとして、プロセスｎごとに、伝熱ガスの圧力を圧力Ｐ_ｎよりも減少させた場合の基板の温度ＴＷ'_{ｎ,ｍａｘ}と、伝熱ガスの圧力を圧力Ｐ_ｎよりも増加させた場合の基板の温度ＴＷ'_{ｎ,ｍｉｎ}とを取得し、温調媒体の温度を、以下の式（１）を満たす温度ＴＢ"に調整し、プロセスｎごとに、基板の温度が温度ＴＷ_ｎとなるよう伝熱ガスの圧力を調整する。　ＴＢ＋ｍａｘ（ＴＷ_ｎ－ＴＷ'_{ｎ,ｍａｘ}）　≦　ＴＢ"　≦　ＴＢ＋ｍｉｎ（ＴＷ_ｎ－ＴＷ'_{ｎ,ｍｉｎ}）　・・・（１）

H	ELECTRICITY
01	BASIC ELECTRIC ELEMENTS
L	SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21	Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02	Manufacture or treatment of semiconductor devices or of parts thereof
04	the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18	the devices having semiconductor bodies comprising elements of group IV of the Periodic System or A_IIIB_V compounds with or without impurities, e.g. doping materials
30	Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302	to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306	Chemical or electrical treatment, e.g. electrolytic etching
3065	Plasma etching; Reactive-ion etching

H	ELECTRICITY
01	BASIC ELECTRIC ELEMENTS
L	SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21	Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02	Manufacture or treatment of semiconductor devices or of parts thereof
04	the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18	the devices having semiconductor bodies comprising elements of group IV of the Periodic System or A_IIIB_V compounds with or without impurities, e.g. doping materials
30	Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302	to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306	Chemical or electrical treatment, e.g. electrolytic etching
3065	Plasma etching; Reactive-ion etching

H	ELECTRICITY
01	BASIC ELECTRIC ELEMENTS
L	SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21	Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02	Manufacture or treatment of semiconductor devices or of parts thereof
04	the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18	the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or A_IIIB_V compounds with or without impurities, e.g. doping materials
30	Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
302	to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
306	Chemical or electrical treatment, e.g. electrolytic etching
3065	Plasma etching; Reactive-ion etching

H	ELECTRICITY
01	BASIC ELECTRIC ELEMENTS
L	SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21	Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02	Manufacture or treatment of semiconductor devices or of parts thereof
04	the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18	the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or A_IIIB_V compounds with or without impurities, e.g. doping materials
30	Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
302	to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
306	Chemical or electrical treatment, e.g. electrolytic etching
3065	Plasma etching; Reactive-ion etching

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1. WO2022163484 - TEMPERATURE CONTROL METHOD AND SUBSTRATE PROCESSING APPARATUS