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1. WO2022160547 - REACTION CHAMBER OF SILICON CARBIDE EPITAXIAL FURNACE

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Publication Number WO/2022/160547
Publication Date 04.08.2022
International Application No. PCT/CN2021/098529
International Filing Date 07.06.2021
IPC
C30B 25/08 2006.1
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
25Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
02Epitaxial-layer growth
08Reaction chambers; Selection of materials therefor
C30B 29/36 2006.1
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10Inorganic compounds or compositions
36Carbides
CPC
C30B 25/08
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
25Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
02Epitaxial-layer growth
08Reaction chambers; Selection of materials therefor
C30B 29/36
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10Inorganic compounds or compositions
36Carbides
Applicants
  • 中国电子科技集团公司第四十八研究所 THE 48TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION [CN]/[CN]
Inventors
  • 巴赛 BA, Sai
  • 胡凡 HU, Fan
  • 陈国钦 CHEN, Guoqin
  • 袁祖浩 YUAN, Zuhao
  • 巩小亮 GONG, Xiaoliang
  • 林伯奇 LIN, Boqi
  • 龙长林 LONG, Changlin
Agents
  • 湖南兆弘专利事务所（普通合伙） HUNAN ZHAOHONG PATENT LAW OFFICE (GENERAL PARTNERSHIP)
Priority Data
202110137060.801.02.2021CN
Publication Language Chinese (zh)
Filing Language Chinese (ZH)
Designated States
Title
(EN) REACTION CHAMBER OF SILICON CARBIDE EPITAXIAL FURNACE
(FR) CHAMBRE DE RÉACTION DE FOUR D'ÉPITAXIE DE CARBURE DE SILICIUM
(ZH) 一种碳化硅外延炉反应室
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Abstract
(EN) A reaction chamber of a silicon carbide epitaxial furnace, the reaction chamber comprising a quartz tube (1), a first sealing flange (2), a second sealing flange (3) and a sealing element (4), wherein a water-cooling jacket (11) is arranged on the periphery of the quartz tube (1), and a reaction device (12) is arranged inside the quartz tube; the first sealing flange (2) is sleeved on the periphery of the quartz tube (1), and abuts against the water-cooling jacket (11); the second sealing flange (3) is connected to the first sealing flange (2); the sealing element (4) is sandwiched between the first sealing flange (2) and the second sealing flange (3); a thermal-insulating cylinder (31) is arranged in the second sealing flange (3); and an end portion of the thermal-insulating cylinder (31) abuts against the reaction device (12). The reaction chamber has the advantages of a simple and reliable structure, facilitates the prevention of a high-temperature failure of a sealing ring, etc.
(FR) L'invention concerne une chambre de réaction d'un four d'épitaxie de carbure de silicium, la chambre de réaction comprenant un tube de quartz (1), une première bride d'étanchéité (2), une seconde bride d'étanchéité (3) et un élément d'étanchéité (4), une chemise de refroidissement à l'eau (11) étant disposée sur la périphérie du tube de quartz (1) et un dispositif de réaction (12) étant disposé à l'intérieur du tube de quartz ; la première bride d'étanchéité (2) étant emmanchée sur la périphérie du tube de quartz (1) et venant en butée contre la chemise de refroidissement à l'eau (11) ; la seconde bride d'étanchéité (3) étant reliée à la première bride d'étanchéité (2) ; l'élément d'étanchéité (4) étant pris en sandwich entre la première bride d'étanchéité (2) et la seconde bride d'étanchéité (3) ; un cylindre d'isolation thermique (31) étant disposé dans la seconde bride d'étanchéité (3) ; et une partie d'extrémité du cylindre d'isolation thermique (31) venant en butée contre le dispositif de réaction (12). La chambre de réaction présente les avantages d'une structure simple et fiable, facilite la prévention d'une défaillance à haute température d'une bague d'étanchéité, etc.
(ZH) 一种碳化硅外延炉反应室，包括石英管(1)、第一密封法兰(2)、第二密封法兰(3)以及密封件(4)，所述石英管(1)外周设有水冷夹套(11)且内部设有反应装置(12)，所述第一密封法兰(2)套设于所述石英管(1)外周并与所述水冷夹套(11)抵接，所述第二密封法兰(3)与所述第一密封法兰(2)相连，所述密封件(4)夹设于第一密封法兰(2)与第二密封法兰(3)之间，所述第二密封法兰(3)内设有隔热筒(31)，所述隔热筒(31)端部与所述反应装置(12)抵接。该装置具有结构简单、可靠，有利于防止密封圈高温失效等优点。
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