Feedback
Settings

Settings

Goto Application

1. WO2022160116 - SEMICONDUCTOR DEVICE STRUCTURES AND METHODS OF MANUFACTURING THE SAME

Submit observation
PermaLink
Publication Number WO/2022/160116
Publication Date 04.08.2022
International Application No. PCT/CN2021/073929
International Filing Date 27.01.2021
IPC
H01L 29/778 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
778with two-dimensional charge carrier gas channel, e.g. HEMT
H01L 21/335 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334Multistep processes for the manufacture of devices of the unipolar type
335Field-effect transistors
CPC
H01L 21/28575
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
283Deposition of conductive or insulating materials for electrodes ; conducting electric current
285from a gas or vapour, e.g. condensation
28506of conductive layers
28575on semiconductor bodies comprising AIIIBV compounds
H01L 21/743
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
71Manufacture of specific parts of devices defined in group H01L21/70
74Making of ; localized; buried regions, e.g. buried collector layers, internal connections ; substrate contacts
743Making of internal connections, substrate contacts
H01L 21/76804
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
71Manufacture of specific parts of devices defined in group H01L21/70
768Applying interconnections to be used for carrying current between separate components within a device ; comprising conductors and dielectrics
76801characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
76802by forming openings in dielectrics
76804by forming tapered via holes
H01L 21/76847
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
71Manufacture of specific parts of devices defined in group H01L21/70
768Applying interconnections to be used for carrying current between separate components within a device ; comprising conductors and dielectrics
76838characterised by the formation and the after-treatment of the conductors
76841Barrier, adhesion or liner layers
76843formed in openings in a dielectric
76847the layer being positioned within the main fill metal
H01L 21/76879
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
71Manufacture of specific parts of devices defined in group H01L21/70
768Applying interconnections to be used for carrying current between separate components within a device ; comprising conductors and dielectrics
76838characterised by the formation and the after-treatment of the conductors
76877Filling of holes, grooves or trenches, e.g. vias, with conductive material
76879by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
H01L 21/76898
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
71Manufacture of specific parts of devices defined in group H01L21/70
768Applying interconnections to be used for carrying current between separate components within a device ; comprising conductors and dielectrics
76898formed through a semiconductor substrate
Applicants
  • INNOSCIENCE (SUZHOU) SEMICONDUCTOR CO., LTD. [CN]/[CN]
Inventors
  • SHEN, Jingyu
  • ZHAO, Qiyue
  • ZHOU, Chunhua
  • YANG, Chao
  • GAO, Wuhao
  • SHI, Yu
  • WEI, Baoli
Agents
  • IDEA INTELLECTUAL (SHENZHEN) IP AGENCY
Priority Data
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) SEMICONDUCTOR DEVICE STRUCTURES AND METHODS OF MANUFACTURING THE SAME
(FR) STRUCTURES DE DISPOSITIF À SEMI-CONDUCTEUR ET LEURS PROCÉDÉS DE FABRICATION
front page image
Abstract
(EN) Semiconductor device structures and methods for manufacturing the same are provided. The semiconductor device structure includes a substrate, a first nitride semiconductor layer, a second nitride semiconductor layer, a gate electrode, a first electrode, a first via and a second via. The substrate has a first surface and a second surface. The first nitride semiconductor layer is disposed on the first surface of the substrate. The second nitride semiconductor layer is disposed on the first nitride semiconductor layer and has a bandgap exceeding that of the first nitride semiconductor layer. The gate electrode and the first electrode are disposed on the second nitride semiconductor layer. The first via extends from the second surface and is electrically connected to the first electrode. The second via extends from the second surface. The depth of the first via is different from the depth of the second via.
(FR) L'invention concerne des structures de dispositif à semi-conducteur et leurs procédés de fabrication. La structure de dispositif à semi-conducteur comprend un substrat, une première couche de semi-conducteur au nitrure, une seconde couche de semi-conducteur au nitrure, une électrode de grille, une première électrode, un premier trou d'interconnexion et un second trou d'interconnexion. Le substrat présente une première surface et une seconde surface. La première couche semi-conductrice au nitrure est disposée sur la première surface du substrat. La seconde couche semi-conductrice au nitrure est disposée sur la première couche semi-conductrice au nitrure et présente une bande interdite supérieure à celle de la première couche semi-conductrice au nitrure. L'électrode de grille et la première électrode sont disposées sur la seconde couche semi-conductrice au nitrure. Le premier trou d'interconnexion s'étend à partir de la seconde surface et est électriquement connecté à la première électrode. Le second trou d'interconnexion s'étend à partir de la seconde surface. La profondeur du premier trou d'interconnexion est différente de la profondeur du second trou d'interconnexion.
Related patent documents
CN112956018
US20220384628
Latest bibliographic data on file with the International Bureau
# -