Processing

Please wait...

Settings

Settings

Goto Application

1. WO2022160115 - SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, AND DISPLAY DEVICE

Publication Number WO/2022/160115
Publication Date 04.08.2022
International Application No. PCT/CN2021/073926
International Filing Date 27.01.2021
IPC
H01L 27/32 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
28including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
32with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes
CPC
G09G 2300/0469
GPHYSICS
09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
2300Aspects of the constitution of display devices
04Structural and physical details of display devices
0469Details of the physics of pixel operation
G09G 2300/0842
GPHYSICS
09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
2300Aspects of the constitution of display devices
08Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
0809Several active elements per pixel in active matrix panels
0842forming a memory circuit, e.g. a dynamic memory with one capacitor
G09G 3/3233
GPHYSICS
09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
3Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
20for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix ; no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
22using controlled light sources
30using electroluminescent panels
32semiconductive, e.g. using light-emitting diodes [LED]
3208organic, e.g. using organic light-emitting diodes [OLED]
3225using an active matrix
3233with pixel circuitry controlling the current through the light-emitting element
H10K 59/1213
H10K 59/1216
Applicants
  • HUAWEI TECHNOLOGIES CO., LTD. [CN]/[CN]
Inventors
  • MASATAKA, Kano
Priority Data
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, AND DISPLAY DEVICE
(FR) DISPOSITIF À SEMI-CONDUCTEURS, SON PROCÉDÉ DE FABRICATION ET DISPOSITIF D'AFFICHAGE
Abstract
(EN) Embodiments of the present application provide a semiconductor device and a method of manufacturing the same for implementing both polysilicon TFTs and oxide TFTs with less process complication. The semiconductor device includes first and second thin film transistor structures formed on a substrate. The first TFT structure includes a first transistor and a capacitor on the first transistor, and the second TFT structure includes a bottom metal layer, a second insulating layer on the bottom metal layer, and a second transistor on the second insulating layer. A lower electrode of the capacitor comprises the same metal material as the bottom metal layer, a dielectric layer of the capacitor comprises the same insulator material as the second insulating layer, and the upper electrode of the capacitor comprises the same oxide semiconductor material as a semiconductor active layer of the second transistor.
(FR) Selon des modes de réalisation, la présente demande concerne un dispositif à semi-conducteurs et son procédé de fabrication permettant de mettre en œuvre des TFT en polysilicium et des TFT en oxyde avec moins de complications de traitement. Le dispositif à semi-conducteurs comprend des première et seconde structures de transistor à couches minces formées sur un substrat. La première structure de TFT comprend un premier transistor et un condensateur sur le premier transistor, et la seconde structure de TFT comprend une couche métallique inférieure, une seconde couche isolante sur la couche métallique inférieure, et un second transistor sur la seconde couche isolante. Une électrode inférieure du condensateur comprend le même matériau métallique que la couche métallique inférieure, une couche diélectrique du condensateur comprend le même matériau isolant que la seconde couche isolante, et l'électrode supérieure du condensateur comprend le même matériau semi-conducteur en oxyde que la couche active semi-conductrice du second transistor.
Latest bibliographic data on file with the International Bureau