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1. WO2022119107 - DISPLAY DEVICE AND METHOD FOR MANUFACTURING LIGHT-EMITTING ELEMENT

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Publication Number WO/2022/119107
Publication Date 09.06.2022
International Application No. PCT/KR2021/014137
International Filing Date 13.10.2021
IPC
H01L 33/20 2010.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
20with a particular shape, e.g. curved or truncated substrate
H01L 25/075 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices
03all the devices being of a type provided for in the same subgroup of groups H01L27/-H01L51/128
04the devices not having separate containers
075the devices being of a type provided for in group H01L33/78
H01L 27/12 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
H01L 25/16 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices
16the devices being of types provided for in two or more different main groups of groups H01L27/-H01L51/139
H01L 33/38 2010.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36characterised by the electrodes
38with a particular shape
CPC
H01L 25/0753
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; ; Multistep manufacturing processes thereof
03all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes
04the devices not having separate containers
075the devices being of a type provided for in group H01L33/00
0753the devices being arranged next to each other
H01L 25/167
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; ; Multistep manufacturing processes thereof
16the devices being of types provided for in two or more different main groups of H01L27/00 - H01L49/00 ; and H01L51/00; , e.g. forming hybrid circuits
167comprising optoelectronic devices, e.g. LED, photodiodes
H01L 27/1214
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
1214comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
H01L 2933/0025
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2933Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
0008Processes
0025relating to coatings
H01L 33/007
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
005Processes
0062for devices with an active region comprising only III-V compounds
0066with a substrate not being a III-V compound
007comprising nitride compounds
H01L 33/0075
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
005Processes
0062for devices with an active region comprising only III-V compounds
0075comprising nitride compounds
Applicants
  • 삼성디스플레이 주식회사 SAMSUNG DISPLAY CO., LTD. [KR]/[KR]
Inventors
  • 이소영 LEE, So Young
  • 김동욱 KIM, Dong Uk
  • 유철종 YOO, Chul Jong
  • 김세영 KIM, Se Young
Agents
  • 오종한 OH, Jong Han
  • 문용호 MOON, Yong Ho
Priority Data
10-2020-016702702.12.2020KR
Publication Language Korean (ko)
Filing Language Korean (KO)
Designated States
Title
(EN) DISPLAY DEVICE AND METHOD FOR MANUFACTURING LIGHT-EMITTING ELEMENT
(FR) DISPOSITIF D'AFFICHAGE ET PROCÉDÉ DE FABRICATION D'UN ÉLÉMENT ÉMETTEUR DE LUMIÈRE
(KO) 표시 장치 및 발광 소자의 제조 방법
front page image
Abstract
(EN) A display device and a manufacturing method for a light-emitting element are provided. The display device includes: a first electrode and a second electrode spaced apart from each other; and a light-emitting element arranged between the first electrode and the second electrode, wherein the light-emitting element includes a first area having a first diameter, a second area having a second diameter greater than the first diameter, a first insulating layer surrounding the first area, and a second insulating layer arranged on the first insulating layer, wherein the second insulating layer surrounds the second area exposed by the first insulating layer.
(FR) L'invention concerne un dispositif d'affichage et un procédé de fabrication d'un élément émetteur de lumière. Le dispositif d'affichage comprend : une première électrode et une seconde électrode, espacées l'une de l'autre ; et un élément émetteur de lumière, disposé entre la première électrode et la seconde électrode, cet élément émetteur de lumière comprenant une première zone présentant un premier diamètre, une seconde zone présentant un second diamètre supérieur au premier diamètre, une première couche isolante entourant la première zone et une seconde couche isolante disposée sur la première couche isolante, la seconde couche isolante entourant la seconde zone exposée par la première couche isolante.
(KO) 표시 장치 및 발광 소자의 제조 방법이 제공된다. 표시 장치는 서로 이격된 제1 전극 및 제2 전극, 및 상기 제1 전극과 상기 제2 전극 사이에 배치된 발광 소자를 포함하고, 상기 발광 소자는, 제1 직경을 갖는 제1 영역, 상기 제1 직경보다 큰 제2 직경을 갖는 제2 영역, 상기 제1 영역을 둘러싸는 제1 절연막, 및 상기 제1 절연막 상에 배치된 제2 절연막을 포함하고, 상기 제2 절연막은 상기 제1 절연막에 의해 노출된 상기 제2 영역을 둘러싼다.
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