Processing

Please wait...

Settings

Settings

Goto Application

1. WO2022118535 - SEMICONDUCTOR MODULE AND METHOD FOR MANUFACTURING SAME

Publication Number WO/2022/118535
Publication Date 09.06.2022
International Application No. PCT/JP2021/037355
International Filing Date 08.10.2021
IPC
H01L 27/146 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
H01L 23/02 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
02Containers; Seals
H01L 23/29 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
28Encapsulation, e.g. encapsulating layers, coatings
29characterised by the material
H01L 23/31 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
28Encapsulation, e.g. encapsulating layers, coatings
31characterised by the arrangement
H04N 5/359 2011.1
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
30Transforming light or analogous information into electric information
335using solid-state image sensors
357Noise processing, e.g. detecting, correcting, reducing or removing noise
359applied to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
CPC
H01L 23/02
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
02Containers; Seals
H01L 23/29
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
28Encapsulations, e.g. encapsulating layers, coatings, ; e.g. for protection
29characterised by the material ; , e.g. carbon
H01L 23/31
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
28Encapsulations, e.g. encapsulating layers, coatings, ; e.g. for protection
31characterised by the arrangement ; or shape
H01L 27/146
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
H04N 25/62
Applicants
  • ソニーセミコンダクタソリューションズ株式会社 SONY SEMICONDUCTOR SOLUTIONS CORPORATION [JP]/[JP]
Inventors
  • 塚田 敦士 TSUKADA, Atsushi
  • 牧野 博文 MAKINO, Hirofumi
  • 五十嵐 浩一 IGARASHI, Koichi
Agents
  • 丸島 敏一 MARUSHIMA, Toshikazu
Priority Data
2020-20081603.12.2020JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) SEMICONDUCTOR MODULE AND METHOD FOR MANUFACTURING SAME
(FR) MODULE SEMI-CONDUCTEUR ET SON PROCÉDÉ DE FABRICATION
(JA) 半導体モジュールおよびその製造方法
Abstract
(EN) The present invention prevents unnecessary light reflection in a semiconductor module that employs a chip-on-chip structure or a chip-on-wafer structure. The semiconductor module includes a substrate, first and second semiconductor elements, and a covering part. The first semiconductor element is disposed on the substrate. The first semiconductor element includes a wiring electrically connected to the substrate and a pixel region of an imaging element on an upper surface opposite to a surface facing the substrate. The second semiconductor element is disposed at a location different from the pixel region on an upper surface of the first semiconductor element. The covering part covers the first and second semiconductor elements from the upper surface in at least a partial region excluding the pixel region.
(FR) La présente invention empêche une réflexion de lumière inutile dans un module semi-conducteur qui emploie une structure puce sur puce ou une structure puce sur tranche. Le module semi-conducteur comprend un substrat, des premier et second éléments semi-conducteurs, et une partie de revêtement. Le premier élément semi-conducteur est disposé sur le substrat. Le premier élément semi-conducteur comprend un câblage électriquement connecté au substrat et une région de pixel d'un élément d'imagerie sur une surface supérieure opposée à une surface faisant face au substrat. Le second élément semi-conducteur est disposé à un emplacement différent de la région de pixel sur une surface supérieure du premier élément semi-conducteur. La partie de revêtement recouvre les premier et second éléments semi-conducteurs à partir de la surface supérieure dans au moins une région partielle excluant la région de pixel.
(JA) チップ・オン・チップ構造やチップ・オン・ウエハ構造を採用する半導体モジュールにおいて不要な光線反射を防止する。 半導体モジュールは、基板と、第1および第2の半導体素子と、覆い部とを備える。第1の半導体素子は、基板上に配置される。第1の半導体素子は、基板との間で電気的に接続された配線および基板に対向する面とは反対の上面に撮像素子の画素領域を備える。第2の半導体素子は、第1の半導体素子の上面において画素領域とは異なる位置に配置される。覆い部は、画素領域を除く少なくとも一部の領域について、第1および第2の半導体素子を上面から覆う。
Latest bibliographic data on file with the International Bureau