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1. WO2022118415 - METHOD FOR PRODUCING LIGHT-EMITTING ELEMENT, AND LIGHT-EMITTING ELEMENT

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Publication Number WO/2022/118415
Publication Date 09.06.2022
International Application No. PCT/JP2020/044948
International Filing Date 03.12.2020
IPC
G03F 7/004 2006.1
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
G03F 7/26 2006.1
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
26Processing photosensitive materials; Apparatus therefor
H01L 33/00 2010.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
G02B 5/20 2006.1
GPHYSICS
02OPTICS
BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
5Optical elements other than lenses
20Filters
CPC
G02B 5/20
GPHYSICS
02OPTICS
BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
5Optical elements other than lenses
20Filters
G03F 7/004
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
G03F 7/26
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
26Processing photosensitive materials; Apparatus therefor
H01L 33/00
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
Applicants
  • シャープ株式会社 SHARP KABUSHIKI KAISHA [JP]/[JP]
Inventors
  • 安達　考洋 ADACHI Takahiro
  • 佐久間　惇 SAKUMA Jun
Agents
  • 井上　知哉 INOUE Tomoya
Priority Data
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) METHOD FOR PRODUCING LIGHT-EMITTING ELEMENT, AND LIGHT-EMITTING ELEMENT
(FR) PROCÉDÉ DE PRODUCTION D'ÉLÉMENT ÉLECTROLUMINESCENT, ET ÉLÉMENT ÉLECTROLUMINESCENT
(JA) 発光素子の製造方法、発光素子
front page image
Abstract
(EN) This method for producing a light-emitting element includes: a first light-emitting layer formation step for applying a coating of first quantum dot solution containing first quantum dots to form a first light-emitting layer; a first resist layer formation step for applying a coating of first photosensitive resin composition onto the first light-emitting layer to form a first resist layer; an exposure step for exposing the first resist layer to light in a prescribed pattern; and a pattern formation step for developing the first resist layer using a developer to form a patterned first resist layer, and processing the first light-emitting layer using a treatment solution, with the patterned first resist layer used as a mask, to form a patterned first light-emitting layer.
(FR) Le présent procédé de production d'élément électroluminescent comprend : une étape de formation de première couche électroluminescente consistant à appliquer un revêtement de première solution de points quantiques contenant des premiers points quantiques pour former une première couche électroluminescente ; une étape de formation de première couche de réserve consistant à appliquer un revêtement de première composition de résine photosensible sur la première couche électroluminescente pour former une première couche de réserve ; une étape d'exposition consistant à exposer la première couche de réserve à une lumière selon un motif prescrit ; et une étape de formation de motif consistant à développer la première couche de réserve à l'aide d'un révélateur pour former une première couche de réserve à motifs, et à traiter la première couche électroluminescente à l'aide d'une solution de traitement, la première couche de réserve à motifs étant utilisée en tant que masque, pour former une première couche électroluminescente à motifs.
(JA) 発光素子の製造方法は、第１量子ドットを含む第１量子ドット溶液を塗布して第１発光層を形成する第１発光層形成工程と、前記第１発光層上に、第１感光性樹脂組成物を塗布して第１レジスト層を形成する第１レジスト層形成工程と、前記第１レジスト層を所定のパターンで露光する露光工程と、前記第１レジスト層を現像液で現像してパターン化された第１レジスト層を形成し、前記パターン化された第１レジスト層をマスクとして前記第１発光層を処理液で処理してパターン化された第１発光層を形成するパターン形成工程と、を含む。
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