Feedback
Settings

Settings

Goto Application

1. WO2022117565 - DECOUPLING CAPACITOR INSIDE GATE CUT TRENCH

Submit observation
PermaLink
Publication Number WO/2022/117565
Publication Date 09.06.2022
International Application No. PCT/EP2021/083573
International Filing Date 30.11.2021
IPC
H01L 27/06 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
06including a plurality of individual components in a non-repetitive configuration
H01L 49/02 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
49Solid state devices not provided for in groups H01L27/-H01L47/99; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
02Thin-film or thick-film devices
H01L 21/8234 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
8232Field-effect technology
8234MIS technology
H01L 23/528 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
52Arrangements for conducting electric current within the device in operation from one component to another
522including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
528Layout of the interconnection structure
CPC
H01L 21/823437
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
8232Field-effect technology
8234MIS technology ; , i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
823437with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
H01L 21/823481
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
8232Field-effect technology
8234MIS technology ; , i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
823481isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure
H01L 23/485
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; ; Selection of materials therefor
482consisting of lead-in layers inseparably applied to the semiconductor body
485consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
H01L 23/5223
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
52Arrangements for conducting electric current within the device in operation from one component to another ; , i.e. interconnections, e.g. wires, lead frames
522including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
5222Capacitive arrangements or effects of, or between wiring layers
5223Capacitor integral with wiring layers
H01L 23/5226
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
52Arrangements for conducting electric current within the device in operation from one component to another ; , i.e. interconnections, e.g. wires, lead frames
522including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
5226Via connections in a multilevel interconnection structure
H01L 23/5286
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
52Arrangements for conducting electric current within the device in operation from one component to another ; , i.e. interconnections, e.g. wires, lead frames
522including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
528Geometry or; layout of the interconnection structure
5286Arrangements of power or ground buses
Applicants
  • INTERNATIONAL BUSINESS MACHINES CORPORATION [US]/[US]
  • IBM UNITED KINGDOM LIMITED [GB]/[GB] (MG)
Inventors
  • VEGA, Reinaldo
  • WOLPERT, David
  • ANDO, Takashi
  • ADUSUMILLI, Praneet
  • CHI, Cheng
Agents
  • GASCOYNE, Belinda
Priority Data
17/110,38103.12.2020US
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) DECOUPLING CAPACITOR INSIDE GATE CUT TRENCH
(FR) CONDENSATEUR DE DÉCOUPLAGE À L'INTÉRIEUR D'UNE TRANCHÉE DE COUPURE DE GRILLE
front page image
Abstract
(EN) An approach to forming a semiconductor device where the semiconductor device includes a first power rail (3A, 3B) with one or more vertically stacked contact vias connecting to the first power rail to a portion of a first de-coupling capacitor. The semiconductor device includes the first de-coupling capacitor in a first portion of a semiconductor substrate in a first gate cut trench (10).
(FR) L'invention porte sur une approche de formation d'un dispositif à semi-conducteur, le dispositif à semi-conducteur comprenant un premier rail d'alimentation (3A, 3B) ayant un ou plusieurs trous d'interconnexion de contact empilés verticalement se connectant au premier rail d'alimentation à une partie d'un premier condensateur de découplage. Le dispositif à semi-conducteur comprend le premier condensateur de découplage dans une première partie d'un substrat semi-conducteur dans une première tranchée (10) de coupure de grille.
Related patent documents
US20220181252
Latest bibliographic data on file with the International Bureau
# -