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1. WO2022114473 - METHOD AND SYSTEM FOR GENERATION AND SIZE CONTROL OF SEMICONDUCTOR QUANTUM DOTS

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Publication Number WO/2022/114473
Publication Date 02.06.2022
International Application No. PCT/KR2021/012384
International Filing Date 11.09.2021
IPC
H01L 21/02 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
B82B 3/00 2006.1
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
BNANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
3Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
B82Y 40/00 2011.1
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE  OR TREATMENT OF NANOSTRUCTURES
40Manufacture or treatment of nanostructures
B82Y 20/00 2011.1
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE  OR TREATMENT OF NANOSTRUCTURES
20Nanooptics, e.g. quantum optics or photonic crystals
CPC
B82B 3/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
BNANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
3Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
B82B 3/0076
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
BNANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
3Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
0061Methods for manipulating nanostructures
0076Methods for manipulating nanostructures not provided for in groups B82B3/0066 - B82B3/0071
B82Y 20/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
20Nanooptics, e.g. quantum optics or photonic crystals
B82Y 40/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
40Manufacture or treatment of nanostructures
H01L 21/02
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/02532
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02518Deposited layers
02521Materials
02524Group 14 semiconducting materials
02532Silicon, silicon germanium, germanium
Applicants
  • 한국표준과학연구원 KOREA RESEARCH INSTITUTE OF STANDARDS AND SCIENCE [KR]/[KR]
Inventors
  • 이효창 LEE, Hyo Chang
  • 김정형 KIM, Jung Hyung
  • 성대진 SEONG, Dae Jin
  • 최대한 CHOI, Dae Han
Agents
  • 고종욱 KOH, Jong Wook
Priority Data
10-2020-015985125.11.2020KR
Publication Language Korean (ko)
Filing Language Korean (KO)
Designated States
Title
(EN) METHOD AND SYSTEM FOR GENERATION AND SIZE CONTROL OF SEMICONDUCTOR QUANTUM DOTS
(FR) PROCÉDÉ ET SYSTÈME DE GÉNÉRATION ET DE RÉGULATION DE LA TAILLE DE POINTS QUANTIQUES SEMI-CONDUCTEURS
(KO) 반도체 양자점의 생성과 크기 제어 방법 및 시스템
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Abstract
(EN) The present invention relates to a method for generating semiconductor quantum dots, the method being characterized by comprising the steps of: depositing an amorphous semiconductor thin film on a substrate; forming a plasma on the amorphous semiconductor thin film and transferring ion energy from the plasma to the amorphous semiconductor thin film to generate crystalline nanoparticles; growing the crystalline nanoparticles by transferring more ion energy to the amorphous semiconductor thin film and the crystalline nanoparticles; and generating quantum dots by growing the crystalline nanoparticles.
(FR) La présente invention concerne un procédé de génération de points quantiques semi-conducteurs, le procédé étant caractérisé en ce qu'il comprend les étapes consistant à : déposer une couche mince semi-conductrice amorphe sur un substrat ; former un plasma sur la couche mince semi-conductrice amorphe et transférer de l'énergie ionique du plasma à la couche mince semi-conductrice amorphe pour générer des nanoparticules cristallines ; faire croître les nanoparticules cristallines par transfert d'une énergie ionique accrue à la couche mince semi-conductrice amorphe et aux nanoparticules cristallines ; et générer des points quantiques par croissance des nanoparticules cristallines.
(KO) 본 발명의 반도체 양자점의 생성 방법에 관한 것으로서, 기판 상부에 비정질 반도체 박막을 증착하는 단계; 상기 비정질 반도체 박막 상부에 플라즈마를 형성하고 이로부터 상기 비정질 반도체 박막에 이온 에너지를 전달하여 결정질 나노입자를 생성하는 단계; 상기 비정질 반도체 박막과 상기 결정질 나노입자에 이온 에너지를 더 전달하여 상기 결정질 나노입자를 성장시키는 단계; 상기 결정질 나노입자가 성장하여 양자점이 생성되는 단계;를 포함하는 것을 특징으로 한다.
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