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1. WO2022114127 - SUBSTRATE PROCESSING DEVICE AND SUBSTRATE PROCESSING METHOD

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Publication Number WO/2022/114127
Publication Date 02.06.2022
International Application No. PCT/JP2021/043391
International Filing Date 26.11.2021
IPC
H01L 21/304 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304Mechanical treatment, e.g. grinding, polishing, cutting
H01L 21/673 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
673using specially adapted carriers
CPC
H01L 21/304
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
302to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
304Mechanical treatment, e.g. grinding, polishing, cutting
H01L 21/673
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
673using specially adapted carriers ; or holders; Fixing the workpieces on such carriers or holders
Applicants
  • 株式会社ＳＣＲＥＥＮホールディングス SCREEN HOLDINGS CO., LTD. [JP]/[JP]
Inventors
  • 墨　周武 SUMI, Noritake
Agents
  • 振角　正一 FURIKADO, Shoichi
  • 大西　一正 OHNISHI, Kazumasa
Priority Data
2020-19788030.11.2020JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) SUBSTRATE PROCESSING DEVICE AND SUBSTRATE PROCESSING METHOD
(FR) DISPOSITIF ET PROCÉDÉ DE TRAITEMENT DE SUBSTRAT
(JA) 基板処理装置および基板処理方法
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Abstract
(EN) The present invention comprises: a support tray that is a flat plate shape and supports a lower surface of a substrate in a horizontal position; a container body in which a processing space that can accommodate the support tray supporting the substrate is provided, and in which an opening that is in communication with the processing space and is for allowing the support tray to pass through is provided in the rear; a lid part that is provided so as to be able to block the opening while retaining the support tray; and a vertical movement mechanism that, by causing the lid part to move relative to the container body in a vertical direction, adjusts the vertical direction relative location of the substrate supported by the support tray, said relative location being relative to the processing space.
(FR) La présente invention comprend : un plateau de support qui est une forme de plaque plate et supporte une surface inférieure d'un substrat dans une position horizontale ; un corps de récipient dans lequel est disposé un espace de traitement qui peut recevoir le plateau de support supportant le substrat, et dans lequel une ouverture qui est en communication avec l'espace de traitement et est destinée à permettre au plateau de support de passer à travers est disposée à l'arrière ; une partie couvercle qui est disposée de façon à pouvoir bloquer l'ouverture tout en retenant le plateau de support ; et un mécanisme de déplacement vertical qui, en amenant la partie couvercle à se déplacer par rapport au corps de récipient dans une direction verticale, règle la position relative de la direction verticale du substrat supporté par le plateau de support, ledit emplacement relatif étant par rapport à l'espace de traitement.
(JA) この発明は、水平姿勢の基板の下面を支持する平板状の支持トレイと、基板を支持する支持トレイを収容可能な処理空間および処理空間に連通し支持トレイを通過させるための開口が側方に設けられた容器本体と、支持トレイを保持しながら開口を閉塞可能に設けられる蓋部と、蓋部を容器本体に対して相対的に鉛直方向に移動させることにより、支持トレイに支持された基板の鉛直方向における処理空間に対する相対位置を調整する鉛直移動機構と、を備えている。
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