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1. WO2022114067 - MATERIAL FOR PHOTOELECTRIC CONVERSION ELEMENT FOR IMAGING

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Publication Number WO/2022/114067
Publication Date 02.06.2022
International Application No. PCT/JP2021/043224
International Filing Date 25.11.2021
IPC
H01L 51/42 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
42specially adapted for sensing infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation; specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
H01L 31/10 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08in which radiation controls flow of current through the device, e.g. photoresistors
10characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
H01L 27/146 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
H01L 27/30 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
28including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
30with components specially adapted for sensing infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation; with components specially adapted for either the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
CPC
H01L 27/146
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
H01L 31/10
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08in which radiation controls flow of current through the device, e.g. photoresistors
10characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
H10K 30/00
H10K 39/00
Applicants
  • 日鉄ケミカル＆マテリアル株式会社 NIPPON STEEL CHEMICAL & MATERIAL CO., LTD. [JP]/[JP]
Inventors
  • 川田　敦志 KAWADA Atsushi
  • 井上　棟智 INOUE Munetomo
  • 林　健太郎 HAYASHI Kentaro
Agents
  • 佐々木　一也 SASAKI Kazuya
  • 佐野　英一 SANO Eiichi
  • 原　克己 HARA Katsumi
  • 久本　秀治 HISAMOTO Shuji
Priority Data
2020-19681827.11.2020JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) MATERIAL FOR PHOTOELECTRIC CONVERSION ELEMENT FOR IMAGING
(FR) MATÉRIAU POUR ÉLÉMENT DE CONVERSION PHOTOÉLECTRIQUE POUR IMAGERIE
(JA) 撮像用光電変換素子用材料
front page image
Abstract
(EN) Provided are: a material with which the high sensitivity and high resolution of a photoelectric conversion element for imaging are achieved; and a photoelectric conversion element for imaging using the same. This material for a photoelectric conversion element for imaging has a structure represented by general formula (1). L’s each independently represent a single bond, a C6-C30 aromatic hydrocarbon group, or the like. a represents the number of substitutions and represents an integer of 1-6.　Ar1’s each independently represent a group represented by formula (2).　Ar2’s each independently represent a C3-C30 aromatic heterocyclic group containing a nitrogen-containing six-membered ring structure or the like, where a group bonded to L is an aromatic heterocyclic group. A ring B represents a heterocycle represented by formula (2a) and condensed with an adjacent ring at an arbitrary position. * in formula (2) represents a bonding position to L in formula (1). X represents O, S, or N-Ar3.
(FR) L'invention concerne : un matériau avec lequel la sensibilité élevée et la résolution élevée d'un élément de conversion photoélectrique pour une imagerie sont obtenues ; et un élément de conversion photoélectrique pour imagerie l'utilisant. Ce matériau pour élément de conversion photoélectrique pour imagerie présente une structure représentée par la formule générale (1). Les L représentent chacun indépendamment une liaison simple, un groupe hydrocarboné aromatique en C6-C30, ou similaire. A représente le nombre de substitutions et représente un nombre entier de 1 à 6.　Les Ar1 représentent chacun indépendamment un groupe représenté par la formule (2).　Les Ar2 représentent chacun indépendamment un groupe hétérocyclique aromatique en C3-C30 contenant une structure cyclique à six chaînons contenant de l'azote ou similaire, un groupe lié à L étant un groupe hétérocyclique aromatique. Un cycle B représente un hétérocycle représenté par la formule (2a) et condensé avec un cycle adjacent à une position arbitraire. * dans la formule (2) représente une position de liaison à L dans la formule (1). X représente O, S ou N-Ar3.
(JA) 撮像用の光電変換素子の高感度化、高解像度化を実現する材料、及びこれを用いた撮像用の光電変換素子を提供すること。 下記一般式（１）の構造を有する撮像用の光電変換素子用材料。Ｌは、各々独立に、単結合、炭素数６～３０の芳香族炭化水素基などを示す。ａは置換数を表し１～６の整数を示す。　Ａｒ１は、各々独立に、下記式（２）で表される基を示す。　Ａｒ２は、各々独立に、含窒素６員環構造を含む炭素数３～３０の芳香族複素環基などを示す。ただし、Ｌと結合する基は芳香族複素環基である。環Ｂは隣接環と任意の位置で縮合する式（２ａ）で表される複素環を示す。式（２）の＊は、式（１）のＬとの結合位置を示す。Ｘは、O、S、N-Ａｒ３を示す。
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