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1. WO2022112802 - COMPOSITION OF TRANSPARENT CONDUCTIVE MATERIAL AND METHOD FOR FABRICATING THE SAME

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Publication Number WO/2022/112802
Publication Date 02.06.2022
International Application No. PCT/GB2021/053121
International Filing Date 30.11.2021
IPC
H01L 31/0224 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0224Electrodes
H01B 1/08 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
1Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
06mainly consisting of other non-metallic substances
08oxides
H01L 31/18 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 33/42 2010.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36characterised by the electrodes
40Materials therefor
42Transparent materials
H01L 51/44 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
42specially adapted for sensing infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation; specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
44Details of devices
CPC
H01B 1/08
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
1Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
06mainly consisting of other non-metallic substances
08oxides
H01L 31/022466
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0224Electrodes
022466made of transparent conductive layers, e.g. TCO, ITO layers
H01L 31/1884
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
1884Manufacture of transparent electrodes, e.g. TCO, ITO
H01L 33/42
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36characterised by the electrodes
40Materials therefor
42Transparent materials
H10K 2102/101
H10K 30/82
Applicants
  • THE UNIVERSITY OF LIVERPOOL [GB]/[GB]
Inventors
  • STONER, Jessica
  • ALARIA, Jonathon
  • ROSSEINSKY, Matthew
Agents
  • APPLEYARD LEES IP LLP
Priority Data
2018825.630.11.2020GB
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) COMPOSITION OF TRANSPARENT CONDUCTIVE MATERIAL AND METHOD FOR FABRICATING THE SAME
(FR) COMPOSITION DE MATÉRIAU CONDUCTEUR TRANSPARENT ET SON PROCÉDÉ DE FABRICATION
front page image
Abstract
(EN) A film comprising a set of layers including a first layer, a third layer and a second layer therebetween is described. The first layer comprises and/or is a transparent conductive oxide, TCO, having a formula: A1 B1 O3 — δ1; The third layer comprises and/or is a transparent wide-bandgap semiconductor oxide having a formula: A3 B3 03- δ3; The second layer comprises and/or is an oxide layer having a formula: A1αA31-αB1O3-δ2 or A1αA31-αB3O3-δ2 or A3B1βB31-βO3-δ2 or A1αA31-αB1βB31-βO3-δ2 ; wherein 0 < α, β < 1, -0.5 ≤δ1, δ2, δ3 ≤ 0.5.
(FR) Film comprenant un ensemble de couches comprenant une première couche, une troisième couche et une deuxième couche entre celles-ci. La première couche comprend et/ou est un oxyde conducteur transparent, TCO, présentant une formule : A1 B1 O3 — δ1; la troisième couche comprend et/ou est un oxyde semi-conducteur transparent à large bande interdite présentant une formule : A3 B3 03- δ2 la deuxième couche comprend et/ou est une couche d'oxyde présentant une formule : A1 αA3 1-αB1O3-δ2 ou A1 αA3 1-αB3O3-δ2 orA3B1 βB3 1-βO3-δ2 ou A1 αA3 1-αB1 βB3 1-βO3-δ2 ; , où 0 < α, β < 1, -0,5 ≤δ1, δ2, δ3 ≤ 0,5.
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