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1. WO2022096071 - PHOTOCONDUCTOR AND METHOD FOR PRODUCING SAME

Publication Number WO/2022/096071
Publication Date 12.05.2022
International Application No. PCT/DE2021/200163
International Filing Date 22.10.2021
IPC
H01L 31/09 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08in which radiation controls flow of current through the device, e.g. photoresistors
09Devices sensitive to infra-red, visible or ultra- violet radiation
H01L 31/0352 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248characterised by their semiconductor bodies
0352characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
H01L 31/0304 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248characterised by their semiconductor bodies
0256characterised by the material
0264Inorganic materials
0304including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 31/18 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Applicants
  • HUMBOLDT-UNIVERSITÄT ZU BERLIN [DE]/[DE]
  • FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ANGEWANDTEN FORSCHUNG E. V. [DE]/[DE]
Inventors
  • MASSELINK, William Ted
  • SEMTSIV, Mykhaylo Petrovych
  • GLOBISCH, Björn
Agents
  • FISCHER, Uwe
Priority Data
10 2020 213 957.106.11.2020DE
Publication Language German (de)
Filing Language German (DE)
Designated States
Title
(DE) FOTOLEITER UND VERFAHREN ZU DESSEN HERSTELLUNG
(EN) PHOTOCONDUCTOR AND METHOD FOR PRODUCING SAME
(FR) PHOTOCONDUCTEUR ET SON PROCÉDÉ DE PRODUCTION
Abstract
(DE) Die Erfindung bezieht sich unter anderem auf einen Fotoleiter (10) mit einem Schichtpaket (13), das mehrere fotoleitende Halbleiterschichten (131-134) umfasst. Erfindungsgemäß ist vorgesehen, dass das Schichtpaket (13) zumindest zwei Subpakete (130) umfasst, die jeweils zumindest eine erste fotoleitende Halbleiterschicht (131) und eine zweite fotoleitende Halbleiterschicht (132) umfassen, wobei bei jedem der Subpakete (130) die erste und zweite fotoleitende Halbleiterschicht (131, 132) unterschiedlich hoch dotiert sind.
(EN) The invention relates inter alia to a photoconductor (10) comprising a multilayer (13) which comprises a plurality of photoconductive semiconductor layers (131-134). According to the invention, the multilayer (13) comprises at least two sublayers (130) which each comprise at least a first photoconductive semiconductor layer (131) and a second photoconductive semiconductor layer (132), wherein the first and the second photoconductive semiconductor layer (131, 132) are doped to different degrees for each of the sublayers (130).
(FR) L'invention concerne, entre autres, un photoconducteur (10) comprenant une multicouche (13) qui comprend une pluralité de couches semi-conductrices photoconductrices (131-134). Selon l'invention, la multicouche (13) comprend au moins deux sous-couches (130) qui comprennent chacune au moins une première couche semi-conductrice photoconductrice (131) et une seconde couche semi-conductrice photoconductrice (132), la première et la seconde couche semi-conductrice photoconductrice (131, 132) étant dopées à différents degrés pour chacune des sous-couches (130).
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