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1. WO2022094222 - NITRIDE-BASED ULTRAVIOLET LIGHT EMITTING DIODE WITH AN ULTRAVIOLET TRANSPARENT CONTACT

Publication Number WO/2022/094222
Publication Date 05.05.2022
International Application No. PCT/US2021/057267
International Filing Date 29.10.2021
IPC
B82Y 20/00 2011.1
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE  OR TREATMENT OF NANOSTRUCTURES
20Nanooptics, e.g. quantum optics or photonic crystals
H01L 33/00 2010.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H01L 33/06 2010.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
04with a quantum effect structure or superlattice, e.g. tunnel junction
06within the light emitting region, e.g. quantum confinement structure or tunnel barrier
Applicants
  • THE REGENTS OF THE UNIVERSITY OF CALIFORNIA [US]/[US]
Inventors
  • IZA, Michael
  • WONG, Matthew S.
  • DENBAARS, Steven P.
  • NAKAMURA, Shuji
Agents
  • GATES, George H.
Priority Data
63/107,86030.10.2020US
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) NITRIDE-BASED ULTRAVIOLET LIGHT EMITTING DIODE WITH AN ULTRAVIOLET TRANSPARENT CONTACT
(FR) DIODE ÉLECTROLUMINESCENTE ULTRAVIOLETTE À BASE DE NITRURE POURVUE D'UN CONTACT TRANSPARENT AUX ULTRAVIOLETS
Abstract
(EN) A nitride-based ultraviolet light emitting diode (UVLED) with an ultraviolet transparent contact (UVTC). The nitride-based UVLED is an alloy composition of (Ga, Al, In, B)N semiconductors, and the UVTC is composed of an oxide with a bandgap larger than that emitted in an active region of the nitride-based UVLED, wherein the oxide is an alloy composition of (Ga, Al, In, B, Mg, Fe, Si, Sn)O semiconductors, such as Ga2O3.
(FR) Une diode électroluminescente ultraviolette (DEL UV) à base de nitrure est pourue d'un contact transparent aux ultraviolets (UVTC). La DEL UV à base de nitrure est une composition d'alliage de semi-conducteurs à base de (Ga, Al, in,B)N, et l'UVTC est composé d'un oxyde ayant une bande interdite plus grande que celle émise dans une région active de la DEL UV à base de nitrure, l'oxyde étant une composition d'alliage de semi-conducteurs à base de (Ga, Al, in, B, Mg, Fe, Si, Sn)O, tels que Ga2O3.
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