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1. WO2022094018 - METHOD OF TRANSFERRING A PATTERN TO AN EPITAXIAL LAYER OF A LIGHT EMITTING DEVICE

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Publication Number WO/2022/094018
Publication Date 05.05.2022
International Application No. PCT/US2021/056962
International Filing Date 28.10.2021
IPC
H01L 21/20 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
H01L 21/36 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
34the devices having semiconductor bodies not provided for in groups H01L21/06, H01L21/16, and H01L21/18159
36Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
H01L 21/78 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
H01S 5/02 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
02Structural details or components not essential to laser action
Applicants
  • THE REGENTS OF THE UNIVERSITY OF CALIFORNIA [US]/[US]
Inventors
  • GANDROTHULA, Srinivas
  • KAMIKAWA, Takeshi
Agents
  • GATES, George H.
Priority Data
63/106,44428.10.2020US
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) METHOD OF TRANSFERRING A PATTERN TO AN EPITAXIAL LAYER OF A LIGHT EMITTING DEVICE
(FR) PROCÉDÉ DE TRANSFERT D'UN MOTIF SUR UNE COUCHE ÉPITAXIALE D'UN DISPOSITIF ÉLECTROLUMINESCENT
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Abstract
(EN) Light emitting devices having light extraction or guiding structures integrated in their epitaxial layers, wherein the light extraction and guiding structures are fabricated using a lateral epitaxial growth technique that transfers a pattern from a growth restrict mask and/or host substrate to the epitaxial layers.
(FR) L'invention concerne des dispositifs électroluminescents ayant des structures d'extraction ou de guidage de lumière intégrées dans leurs couches épitaxiales, les structures d'extraction et de guidage de lumière étant fabriquées à l'aide d'une technique de croissance épitaxiale latérale qui transfère un motif à partir d'un masque de restriction de croissance et/ou d'un substrat hôte vers les couches épitaxiales.
Latest bibliographic data on file with the International Bureau
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