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1. WO2022093113 - PHOTODIODE DETECTOR AND METHOD OF FABRICATING THE SAME

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Publication Number WO/2022/093113
Publication Date 05.05.2022
International Application No. PCT/SG2021/050635
International Filing Date 21.10.2021
IPC
H01L 31/0312 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248characterised by their semiconductor bodies
0256characterised by the material
0264Inorganic materials
0312including, apart from doping materials or other impurities, only AIVBIV compounds, e.g. SiC
H01L 31/107 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08in which radiation controls flow of current through the device, e.g. photoresistors
10characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
101Devices sensitive to infra-red, visible or ultra-violet radiation
102characterised by only one potential barrier or surface barrier
107the potential barrier working in avalanche mode, e.g. avalanche photodiode
H01L 31/18 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
CPC
H01L 31/0312
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248characterised by their semiconductor bodies
0256characterised by the material
0264Inorganic materials
0312including, apart from doping materials or other impurities, only AIVBIV compounds, e.g. SiC
H01L 31/107
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08in which radiation controls flow of current through the device, e.g. photoresistors
10characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
101Devices sensitive to infra-red, visible or ultra-violet radiation
102characterised by only one potential barrier or surface barrier
107the potential barrier working in avalanche mode, e.g. avalanche photodiode
H01L 31/18
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Applicants
  • NANYANG TECHNOLOGICAL UNIVERSITY [SG]/[SG]
Inventors
  • CHEN, Qimiao
  • TAN, Chuan Seng
  • ZHANG, Lin
  • WU, Shaoteng
Agents
  • AMICA LAW LLC
Priority Data
10202010685X28.10.2020SG
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) PHOTODIODE DETECTOR AND METHOD OF FABRICATING THE SAME
(FR) DÉTECTEUR À PHOTODIODE ET SON PROCÉDÉ DE FABRICATION
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Abstract
(EN) According to embodiments of the present invention, a photodiode detector is provided. The photodiode detector includes an optical cavity including an overlying light-receiving portion and an underlying mirror; and a GeSn absorption layer. The GeSn absorption layer may be disposed within the optical cavity and arranged between the overlying light-receiving portion and the underlying mirror. The overlying light-receiving portion may be configured to receive light to be detected by the photodiode detector. According to further embodiments of the present invention, a method of fabricating a photodiode detector is also provided.
(FR) Selon des modes de réalisation, la présente invention concerne un détecteur à photodiode. Le détecteur à photodiode comprend : une cavité optique comprenant une partie de réception de lumière sous-jacente et un miroir sous-jacent ; et une couche d'absorption de GeSn. La couche d'absorption de GeSn peut être disposée dans la cavité optique et entre la partie de réception de lumière sous-jacente et le miroir sous-jacent. La partie de réception de lumière sous-jacente peut être configurée pour recevoir la lumière à détecter par le détecteur à photodiode. Selon d'autres modes de réalisation, la présente invention concerne un procédé de fabrication d'un détecteur à photodiode.
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