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1. WO2022089841 - MULTI MIRROR STACK

Publication Number WO/2022/089841
Publication Date 05.05.2022
International Application No. PCT/EP2021/075938
International Filing Date 21.09.2021
IPC
H03H 9/17 2006.1
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
15Constructional features of resonators consisting of piezo-electric or electrostrictive material
17having a single resonator
H03H 9/02 2006.1
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
02Details
H03H 3/02 2006.1
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
3Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
007for the manufacture of electromechanical resonators or networks
02for the manufacture of piezo-electric or electrostrictive resonators or networks
CPC
H03H 2003/025
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
3Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
007for the manufacture of electromechanical resonators or networks
02for the manufacture of piezo-electric or electrostrictive resonators or networks
025the resonators or networks comprising an acoustic mirror
H03H 9/02047
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
02Details
02007of bulk acoustic wave devices
02047Treatment of substrates
H03H 9/02102
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
02Details
02007of bulk acoustic wave devices
02086Means for compensation or elimination of undesirable effects
02102of temperature influence
H03H 9/175
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
15Constructional features of resonators consisting of piezo-electric or electrostrictive material
17having a single resonator
171implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
172Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
175Acoustic mirrors
H03H 9/545
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
46Filters
54comprising resonators of piezo-electric or electrostrictive material
545including active elements
H03H 9/547
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
46Filters
54comprising resonators of piezo-electric or electrostrictive material
547Notch filters, e.g. notch BAW or thin film resonator filters
Applicants
  • RF360 EUROPE GMBH [DE]/[DE]
Inventors
  • LUKASHOV, Ilya
  • BYWALEZ, Robert Felix
Agents
  • BARDEHLE PAGENBERG PARTNERSCHAFT MBB PATENTANWÄLTE, RECHTSANWÄLTE
Priority Data
17/476,99216.09.2021US
63/108,15330.10.2020US
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) MULTI MIRROR STACK
(FR) EMPILEMENT DE MIROIRS MULTIPLES
Abstract
(EN) In certain aspects, a chip includes an acoustic resonator (150A, 150B), and a mirror (130A, 130B) under the acoustic resonator. The mirror includes a first plurality of porous silicon layers (132A-1,132A-2,...), and a second plurality of porous silicon layers (136A-1, 136A-2,...), wherein the mirror alternates between the first plurality of porous silicon layers and the second plurality of porous silicon layers, and each of the first plurality of porous silicon layers has a higher porosity than each of the second plurality of porous silicon layers.
(FR) Dans certains aspects, une puce comprend un résonateur acoustique (150A, 150B) et un miroir (130A, 130B) sous le résonateur acoustique. Le miroir comprend une première pluralité de couches de silicium poreux (132A-1,132A-2...), et une seconde pluralité de couches de silicium poreux (136A-1, 136A-2...), le miroir alternant entre la première pluralité de couches de silicium poreux et la seconde pluralité de couches de silicium poreux et chaque couche de la première pluralité de couches de silicium poreux a une porosité supérieure à celle de chaque couche de la seconde pluralité de couches de silicium poreux.
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