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1. WO2022080158 - MANUFACTURING METHOD FOR FUNCTIONAL FILM-COATED WAFER

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Publication Number WO/2022/080158
Publication Date 21.04.2022
International Application No. PCT/JP2021/036523
International Filing Date 01.10.2021
IPC
B05D 1/40 2006.1
BPERFORMING OPERATIONS; TRANSPORTING
05SPRAYING OR ATOMISING IN GENERAL; APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL
DPROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL
1Processes for applying liquids or other fluent materials
40Distributing applied liquids or other fluent materials by members moving relatively to surface
B05D 3/10 2006.1
BPERFORMING OPERATIONS; TRANSPORTING
05SPRAYING OR ATOMISING IN GENERAL; APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL
DPROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL
3Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
10by other chemical means
B05D 7/24 2006.1
BPERFORMING OPERATIONS; TRANSPORTING
05SPRAYING OR ATOMISING IN GENERAL; APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL
DPROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL
7Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
24for applying particular liquids or other fluent materials
H01L 21/304 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304Mechanical treatment, e.g. grinding, polishing, cutting
CPC
B05D 1/40
BPERFORMING OPERATIONS; TRANSPORTING
05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
1Processes for applying liquids or other fluent materials
40Distributing applied liquids or other fluent materials by members moving relatively to surface
B05D 3/10
BPERFORMING OPERATIONS; TRANSPORTING
05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
3Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
10by other chemical means
B05D 7/24
BPERFORMING OPERATIONS; TRANSPORTING
05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
7Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
24for applying particular liquids or other fluent materials
H01L 21/304
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
302to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
304Mechanical treatment, e.g. grinding, polishing, cutting
Applicants
  • 日産化学株式会社 NISSAN CHEMICAL CORPORATION [JP]/[JP]
Inventors
  • 大橋　智也 OHASHI Tomoya
  • 佐々　卓 SASSA Suguru
Agents
  • 高岡　亮一 TAKAOKA Ryoichi
  • 小田　直 ODA Nao
  • 山下　武志 YAMASHITA Takeshi
  • 小森　幸子 KOMORI Yukiko
  • 樋口　喜弘 HIGUCHI Yoshihiro
Priority Data
2020-17218812.10.2020JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) MANUFACTURING METHOD FOR FUNCTIONAL FILM-COATED WAFER
(FR) PROCÉDÉ DE FABRICATION D'UNE TRANCHE REVÊTUE D'UN FILM FONCTIONNEL
(JA) 機能膜付きウエハーの製造方法
Abstract
(EN) Provided is a method for manufacturing a functional film-coated water, wherein, even if a high-viscosity coating-type material is used as the coating-type material containing a functional film constituent component, the functional film on an outer circumferential section of the wafer surface can be cleanly removed, an end face of the removed functional film has a favorable shape, and a flat functional film can be formed. Furthermore, contamination attributed to a coating film remaining on a beveled section or back face of the wafer does not occur, and the outer circumferential section of the effective wafer surface for practical applications is exposed in a ring shape.　The method for manufacturing a functional film-coated wafer in which the outer circumferential section of the wafer surface is exposed in a ring shape comprises: a step (A) for spin coating a high-viscosity coating-type material containing a functional film constituent component onto a wafer surface to form a coating film; after the step (A), a step (B-1) for, while rotating the wafer, supplying a cleaning liquid to the outer circumferential section of the water surface on which the coating film was formed, and removing the coating film from the outer circumferential section of the wafer surface; after the step (B-1), a step (C) for heating the coating film on the wafer to form a fluidity suppression film that suppresses fluidity of the coating film; after the step (C), a step (D-1) for, while rotating the wafer, supplying a cleaning liquid to the outer circumferential section of the wafer surface on which the fluidity suppression film was formed, and removing the fluidity suppression film from the wafer surface; and, after the step (D-1), a step (E) for heating the fluidity suppression film on the wafer so as to manifest the function of the functional film constituent component and form a functional film.
(FR) L'invention concerne un procédé de fabrication d'une tranche revêtue d'un film fonctionnel, dans lequel, même en cas d'utilisation d'un matériau de type revêtement à viscosité élevée en tant que matériau de type revêtement contenant un composant constitutif d'un film fonctionnel, le film fonctionnel sur une section circonférentielle externe de la surface de la tranche peut être éliminé de manière nette, une face d'extrémité du film fonctionnel retiré présente une forme avantageuse, et un film fonctionnel plat peut être formé. En outre, la contamination attribuée à un film de revêtement restant sur une section biseautée ou une face arrière de la tranche ne se produit pas, et la section circonférentielle externe de la surface de la tranche efficace pour des applications pratiques est mise à nue sous la forme d'un anneau.　Le procédé de fabrication d'une tranche revêtue d'un film fonctionnel, dans lequel la section circonférentielle externe de la surface de la tranche est mise à nue sous la forme d'un anneau, comprend : une étape (A) consistant à déposer à la tournette un matériau de type revêtement à viscosité élevée contenant un composant constitutif d'un film fonctionnel sur une surface de la tranche pour former un film de revêtement ; après l'étape (A), une étape (B-1) consistant à amener, tout en faisant tourner la tranche, un liquide de nettoyage jusqu'à la section circonférentielle externe de la surface de la tranche sur laquelle le film de revêtement a été formé, et à retirer le film de revêtement de la section circonférentielle externe de la surface de la tranche ; après l'étape (B-1), une étape (C) consistant à chauffer le film de revêtement sur la tranche pour former un film à fluidité inhibée qui inhibe la fluidité du film de revêtement ; après l'étape (C), une étape (D-1) consistant à amener, tout en faisant tourner la tranche, un liquide de nettoyage jusqu'à la section circonférentielle externe de la surface de la tranche sur laquelle le film à fluidité inhibée a été formé, et à retirer le film à fluidité inhibée de la surface de la tranche ; et, après l'étape (D-1), une étape (E) consistant à chauffer le film à fluidité inhibée sur la tranche de façon à révéler la fonction du composant constitutif du film fonctionnel et à former un film fonctionnel.
(JA) 機能膜付きウエハーの製造方法において、機能膜構成成分を含む塗布型材料として高粘度塗布型材料を用いた場合であっても、ウエハーの表面の外周部の機能膜がきれいに除去されており、除去された機能膜の端面が良好な形状を有し、平坦な機能膜が形成でき、さらにウエハーのベベル部や裏面に塗膜残存に起因した汚れもない、実用上有効なウエハー表面の外周部が環状に露出した機能膜付きウエハーの製造方法を提供する。　ウエハーの表面に、機能膜構成成分を含む高粘度塗布型材料をスピンコートして、塗膜を形成する工程（Ａ）と、前記工程（Ａ）の後に、前記ウエハーを回転させながら、前記塗膜が形成された前記ウエハーの表面の外周部に洗浄液を供給し、前記ウエハーの表面の外周部の前記塗膜を除去する工程（Ｂ－１）と、前記工程（Ｂ－１）の後に、前記ウエハー上の前記塗膜を加熱して、塗膜の流動性を抑えた流動性抑制膜を形成する工程（Ｃ）と、前記工程（Ｃ）の後に、前記ウエハーを回転させながら、前記流動性抑制膜が形成された前記ウエハーの表面の外周部に洗浄液を供給し、前記ウエハーの表面の前記流動性抑制膜を除去する工程（Ｄ－１）と、前記工程（Ｄ－１）の後に、前記ウエハー上の前記流動性抑制膜を加熱して、前記機能膜構成成分の機能を発揮させ、機能膜とする工程（Ｅ）とを含む、ウエハーの表面の外周部が環状に露出した機能膜付きウエハーの製造方法である。
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