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1. WO2022076894 - INTEGRATION OF OE DEVICES WITH ICS

Publication Number WO/2022/076894
Publication Date 14.04.2022
International Application No. PCT/US2021/054283
International Filing Date 08.10.2021
IPC
H01L 25/16 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices
16the devices being of types provided for in two or more different main groups of groups H01L27/-H01L51/139
H01L 27/15 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
15including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 23/522 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
52Arrangements for conducting electric current within the device in operation from one component to another
522including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
H01L 31/16 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
12structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
16the semiconductor device sensitive to radiation being controlled by the light source or sources
G02B 6/42 2006.1
GPHYSICS
02OPTICS
BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
6Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
24Coupling light guides
42Coupling light guides with opto-electronic elements
CPC
G02B 6/4246
GPHYSICS
02OPTICS
BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
6Light guides
24Coupling light guides
42Coupling light guides with opto-electronic elements
4201Packages, e.g. shape, construction, internal or external details
4246Bidirectionally operating package structures
Applicants
  • AVICENATECH CORP. [US]/[US]
Inventors
  • KALMAN, Robert
  • PEZESHKI, Bardia
  • DANESH, Cameron
  • TSELIKOV, Alexander
Agents
  • CAVANAGH, Daniel M.
  • SINGH, Tejinder
  • DAO, Tom H.
  • YANG, James C.
  • NUTTALL, Glen L.
  • MAR, Andrew N.
Priority Data
63/089,18808.10.2020US
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) INTEGRATION OF OE DEVICES WITH ICS
(FR) INTÉGRATION DE DISPOSITIFS OE AVEC DES CIRCUITS INTÉGRÉS
Abstract
(EN) Optical interconnects for IC chips may include optical sources and receivers integrated with the IC chips. MicroLEDs may be mounted on an interconnect layer of the IC chip, and embedded within a waveguide. Photodetectors to receive light from the waveguide may be fabricated in a top surface of a semiconductor substrate, below a level of the interconnect layer, but with a passageway for light through the interconnect layer.
(FR) La présente invention concerne des interconnexions optiques pour des puces à CI qui peuvent comprendre des sources optiques et des récepteurs intégrés aux puces à CI. Des microDEL peuvent être montées sur une couche d'interconnexion de la puce à CI et intégrées à l'intérieur d'un guide d'ondes. Des photodétecteurs destinés à recevoir de la lumière provenant du guide d'ondes peuvent être fabriqués dans une surface de dessus d'un substrat semi-conducteur, au-dessous d'un niveau de la couche d'interconnexion, mais avec un passage pour de la lumière à travers la couche d'interconnexion.
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