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1. WO2022076740 - HEATED SUBSTRATE SUPPORT TO MINIMIZE HEAT LOSS AND IMPROVE UNIFORMITY

Publication Number WO/2022/076740
Publication Date 14.04.2022
International Application No. PCT/US2021/054047
International Filing Date 07.10.2021
IPC
H01L 21/687 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
683for supporting or gripping
687using mechanical means, e.g. chucks, clamps or pinches
H01L 21/67 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
C23C 16/458 2006.1
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44characterised by the method of coating
458characterised by the method used for supporting substrates in the reaction chamber
CPC
C23C 16/458
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
458characterised by the method used for supporting substrates in the reaction chamber
H01L 21/67
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
H01L 21/687
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
683for supporting or gripping
687using mechanical means, e.g. chucks, clamps or pinches
Applicants
  • APPLIED MATERIALS, INC. [US]/[US]
Inventors
  • HARAPANHALLI, Pavankumar Ramanand
  • SHEELAVANT, Gangadhar
  • GONDHALEKAR, Sudhir R.
Agents
  • PATEL, Ronak A.
  • TABOADA, Alan
  • LINARDAKIS, Leonard P.
Priority Data
63/089,68809.10.2020US
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) HEATED SUBSTRATE SUPPORT TO MINIMIZE HEAT LOSS AND IMPROVE UNIFORMITY
(FR) SUPPORT DE SUBSTRAT CHAUFFÉ POUR RÉDUIRE AU MINIMUM LA PERTE DE CHALEUR ET AMÉLIORER L'UNIFORMITÉ
Abstract
(EN) Embodiments of substrate support for use in a process chamber are provided herein. In some embodiments, a substrate support for use in a process chamber includes: a heater plate having an upper surface to support a substrate and a lower surface opposite the upper surface, wherein the heater plate comprises a first material having a first coefficient of thermal conductivity, and wherein sidewalls of the heater plate and the lower surface of heater plate are covered with a cover plate comprising a second material having a second coefficient of thermal conductivity less than the first coefficient of thermal conductivity; a hollow shaft coupled to the heater plate, wherein the hollow shaft comprises a third material having a third coefficient of thermal conductivity less than the first coefficient of thermal conductivity; and one or more heating elements disposed in the heater plate.
(FR) L'invention concerne des modes de réalisation de support de substrat à utiliser dans une chambre de traitement. Selon certains modes de réalisation, un support de substrat à utiliser dans une chambre de traitement comprend : une plaque chauffante présentant une surface supérieure pour supporter un substrat et une surface inférieure opposée à la surface supérieure, la plaque chauffante comprenant un premier matériau présentant un premier coefficient de conductibilité thermique, et des parois latérales de la plaque chauffante et la surface inférieure de la plaque chauffante étant recouvertes d'une plaque de protection comprenant un deuxième matériau présentant un deuxième coefficient de conductibilité thermique inférieur au premier coefficient de conductibilité thermique ; un arbre creux couplé à la plaque chauffante, l'arbre creux comprenant un troisième matériau présentant un troisième coefficient de conductibilité thermique inférieur au premier coefficient de conductibilité thermique ; et un ou plusieurs éléments chauffants disposés dans la plaque chauffante.
Latest bibliographic data on file with the International Bureau