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1. WO2022075361 - CURABLE RESIN COMPOSITION FOR SILICON-CONTAINING RESIST, METHOD FOR FORMING PATTERN, METHOD FOR MANUFACTURING IMPRINT MOLD, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

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Publication Number WO/2022/075361
Publication Date 14.04.2022
International Application No. PCT/JP2021/036980
International Filing Date 06.10.2021
IPC
C08F 230/08 2006.1
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
230Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium, or a metal
04containing a metal
08containing silicon
G03F 7/075 2006.1
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
075Silicon-containing compounds
G03F 7/40 2006.1
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
26Processing photosensitive materials; Apparatus therefor
40Treatment after imagewise removal, e.g. baking
H01L 21/027 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
027Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
B29C 59/02 2006.1
BPERFORMING OPERATIONS; TRANSPORTING
29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
59Surface shaping, e.g. embossing; Apparatus therefor
02by mechanical means, e.g. pressing
CPC
B29C 59/02
BPERFORMING OPERATIONS; TRANSPORTING
29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
59Surface shaping ; of articles; , e.g. embossing; Apparatus therefor
02by mechanical means, e.g. pressing
C08F 230/08
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
230Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal
04containing a metal
08containing silicon
G03F 7/075
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
075Silicon-containing compounds
G03F 7/40
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
26Processing photosensitive materials; Apparatus therefor
40Treatment after imagewise removal, e.g. baking
H01L 21/027
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
Applicants
  • 大日本印刷株式会社 DAI NIPPON PRINTING CO., LTD. [JP]/[JP]
Inventors
  • 大川　泰央 OKAWA, Yasuhiro
  • 那須　慎太郎 NASU, Shintaro
  • 金子　雅一 KANEKO, Masakazu
  • 小田　博和 ODA, Hirokazu
Agents
  • 山下　昭彦 YAMASHITA, Akihiko
  • 岸本　達人 KISHIMOTO, Tatsuhito
Priority Data
2020-17009007.10.2020JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) CURABLE RESIN COMPOSITION FOR SILICON-CONTAINING RESIST, METHOD FOR FORMING PATTERN, METHOD FOR MANUFACTURING IMPRINT MOLD, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
(FR) COMPOSITION DE RÉSINE DURCISSABLE POUR RÉSINE PHOTOSENSIBLE CONTENANT DU SILICIUM, PROCÉDÉ DE FORMATION D'UN MOTIF, PROCÉDÉ DE FABRICATION D'UN MOULE D'IMPRESSION ET PROCÉDÉ DE FABRICATION DE DISPOSITIF À SEMI-CONDUCTEUR
(JA) ケイ素含有レジスト用硬化性樹脂組成物、パターン形成方法、インプリントモールドの製造方法および半導体デバイスの製造方法
front page image
Abstract
(EN) The present disclosure provides a curable resin composition for a silicon-containing resist, the curable resin composition including: a polymerizable compound which has a siloxane bond in a molecule, and at least one polymerizable functional group; and a polymerization initiator, wherein among oxygen atoms bonded to silicon atoms contained in the polymerizable compound, the proportion of oxygen atoms bonded to a single silicon atom is at most 10 mol%, and the curable resin composition has a viscosity of at most 20 cPs, and contains no solvent.
(FR) La présente invention concerne une composition de résine durcissable pour une résine photosensible contenant du silicium, la composition de résine durcissable comprenant : un composé polymérisable qui a une liaison siloxane dans une molécule, ainsi qu'au moins un groupe fonctionnel polymérisable ; et un initiateur de polymérisation, parmi des atomes d'oxygène liés à des atomes de silicium contenus dans le composé polymérisable, la proportion d'atomes d'oxygène liés à un seul atome de silicium étant d'au plus 10 % en moles et la composition de résine durcissable ayant une viscosité d'au plus 20 cPs, et ne contenant pas de solvant.
(JA) 本開示は、分子中にシロキサン結合を有し、少なくとも一つの重合性官能基を有する重合性化合物と、重合開始剤とを含むケイ素含有レジスト用硬化性樹脂組成物であって、上記重合性化合物に含まれるケイ素原子に結合する酸素原子のうち、単一のケイ素原子に結合している酸素原子の割合が１０ｍｏｌ％以下であり、粘度が２０ｃＰｓ以下であり、溶剤を含有しない、ケイ素含有レジスト用硬化性樹脂組成物を提供する。
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