Feedback
Settings

Settings

Goto Application

1. WO2022074091 - METHOD FOR LOCAL MODIFICATION OF ETCHING RESISTANCE IN A SILICON LAYER, USE OF THIS METHOD IN THE PRODUCTION OF PASSIVATING CONTACT SOLAR CELLS AND THUS-CREATED SOLAR CELL

Submit observation
PermaLink
Publication Number WO/2022/074091
Publication Date 14.04.2022
International Application No. PCT/EP2021/077637
International Filing Date 07.10.2021
IPC
H01L 31/0224 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0224Electrodes
H01L 31/18 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
CPC
H01L 31/022425
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0224Electrodes
022408for devices characterised by at least one potential jump barrier or surface barrier
022425for solar cells
H01L 31/1804
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
1804comprising only elements of Group IV of the Periodic System
H01L 31/1864
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
186Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
1864Annealing
H01L 31/1868
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
186Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
1868Passivation
H01L 31/1872
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
186Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
1872Recrystallisation
Applicants
  • INTERNATIONAL SOLAR ENERGY RESEARCH CENTER KONSTANZ E.V. [DE]/[DE]
Inventors
  • BUCHHOLZ, Florian
  • HOSS, Jan
  • CHU, Haifeng
  • LOSSEN, Jan
  • MIHAILETCHI, Valentin Dan
Agents
  • WESTPHAL, MUSSGNUG & PARTNER, PATENTANWÄLTE M.B.B.
Priority Data
20201147.409.10.2020EP
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) METHOD FOR LOCAL MODIFICATION OF ETCHING RESISTANCE IN A SILICON LAYER, USE OF THIS METHOD IN THE PRODUCTION OF PASSIVATING CONTACT SOLAR CELLS AND THUS-CREATED SOLAR CELL
(FR) PROCÉDÉ DE MODIFICATION LOCALE DE LA RÉSISTANCE À LA GRAVURE DANS UNE COUCHE DE SILICIUM, UTILISATION DE CE PROCÉDÉ DANS LA PRODUCTION DE CELLULES SOLAIRES À CONTACT DE PASSIVATION ET CELLULE SOLAIRE AINSI CRÉÉE
front page image
Abstract
(EN) Provided are a method for local structuring of a silicon layer, which method comprises a step of local modification of the etching resistance within said silicon layer and a subsequent step of removing unmodified regions of said silicon layer by etching and applications of this method for the production of solar cells.
(FR) Procédé de structuration locale d'une couche de silicium, ledit procédé comprenant une étape de modification locale de la résistance à la gravure dans ladite couche de silicium et une étape ultérieure consistant à éliminer des régions non modifiées de ladite couche de silicium par gravure, et applications de ce procédé destinées à la production de cellules solaires.
Related patent documents
EP3982421
Latest bibliographic data on file with the International Bureau
# -