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1. WO2022070922 - FILM DEPOSITION DEVICE AND FILM DEPOSITION METHOD

Publication Number WO/2022/070922
Publication Date 07.04.2022
International Application No. PCT/JP2021/033945
International Filing Date 15.09.2021
IPC
C23C 14/06 2006.1
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
06characterised by the coating material
H01L 21/203 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
203using physical deposition, e.g. vacuum deposition, sputtering
CPC
C23C 14/06
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
06characterised by the coating material
H01L 21/203
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth ; solid phase epitaxy
203using physical deposition, e.g. vacuum deposition, sputtering
Applicants
  • 芝浦メカトロニクス株式会社 SHIBAURA MECHATRONICS CORPORATION [JP]/[JP]
Inventors
  • 松中 繁樹 MATSUNAKA Shigeki
  • 藤田 篤史 FUJITA Atsushi
Agents
  • 木内 光春 KIUCHI, Mitsuharu
  • 大熊 考一 OHKUMA Koichi
  • 片桐 貞典 KATAGIRI Sadanori
  • 木内 加奈子 KIUCHI Kanako
Priority Data
2020-16350429.09.2020JP
2021-14786610.09.2021JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) FILM DEPOSITION DEVICE AND FILM DEPOSITION METHOD
(FR) DISPOSITIF DE DÉPÔT DE FILM ET PROCÉDÉ DE DÉPÔT DE FILM
(JA) 成膜装置及び成膜方法
Abstract
(EN) Provided are a film deposition device and a film deposition method by which a GaN film can be deposited with high productivity. A film deposition device 1 according to an embodiment of the present invention has: a GaN film deposition processing unit 40A which has a chamber 20 the interior of which can be evacuated, a rotary table 31 disposed inside the chamber 20, holding workpieces 10, and conveying the workpieces 10 in a circulating manner along a circumferential track, a target made of a GaN-containing film deposition material, and a plasma generator for generating plasma of a sputtering gas G1 introduced between the target and the rotary table, and which causes particles of a film deposition material containing GaN and Ga to be deposited by means of sputtering onto the workpieces 10 being conveyed in the circulating manner by the rotary table 31; and a nitriding processing unit 50 which nitrides the particles of the film deposition material deposited by the GaN film deposition processing unit 40A onto the workpieces 10 being conveyed in the circulating manner by the rotary table 31.
(FR) L'invention concerne un dispositif de dépôt de film et un procédé de dépôt de film permettant de déposer un film de GaN avec une productivité élevée. Un dispositif de dépôt de film (1) selon un mode de réalisation de la présente invention comporte : une unité de traitement de dépôt de film de GaN (40A) qui comporte une chambre dont l'intérieur peut être mis sous vide, une table rotative (31) disposée à l'intérieur de la chambre (20), qui reçoit des pièces (10) et transporte les pièces (10) de manière circulante le long d'une piste circonférentielle, une cible constituée d'un matériau de dépôt de film contenant du GaN, et un générateur de plasma pour générer un plasma d'un gaz de pulvérisation cathodique (G1) introduit entre la cible et la table rotative, et qui amène des particules d'un matériau de dépôt de film contenant du GaN et du Ga à être déposées par pulvérisation cathodique sur les pièces (10) qui sont transportées de manière circulante par la table rotative (31) ; et une unité (50) de traitement de nitruration qui nitrure les particules du matériau de dépôt de film déposées par l'unité de traitement de dépôt de film de GaN (40A) sur les pièces (10) transportées de manière circulante par la table rotative (31).
(JA) 高い生産性でGaN膜を成膜できる成膜装置及び成膜方法を提供する。実施形態に係る成膜装置1は、内部を真空とすることが可能なチャンバ20と、チャンバ20内に設けられ、ワーク10を保持し、円周の軌跡でワーク10を循環搬送する回転テーブル31と、GaNを含む成膜材料から成るターゲットと、前記ターゲットと前記回転テーブルとの間に導入されるスパッタガスG1をプラズマ化するプラズマ発生器とを有し、回転テーブル31により循環搬送されるワーク10に、スパッタリングによりGaN及びGaを含む成膜材料の粒子を堆積させるGaN成膜処理部40Aと、回転テーブル31により循環搬送されるワーク10に、GaN成膜処理部40Aにおいて堆積された成膜材料の粒子を窒化させる窒化処理部50と、を有する。
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