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1. WO2022068853 - TEMPERATURE RATE OF CHANGE CONTROL APPARATUS AND METHOD, AND SEMICONDUCTOR PROCESS DEVICE

Publication Number WO/2022/068853
Publication Date 07.04.2022
International Application No. PCT/CN2021/121583
International Filing Date 29.09.2021
IPC
H01L 21/67 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
CPC
C23C 14/541
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
54Controlling or regulating the coating process
541Heating or cooling of the substrates
H01L 21/67011
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
Applicants
  • 北京北方华创微电子装备有限公司 BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD. [CN]/[CN]
Inventors
  • 耿宏伟 GENG, Hongwei
Agents
  • 北京天昊联合知识产权代理有限公司 TEE&HOWE INTELLECTUAL PROPERTY ATTORNEYS
Priority Data
202011055119.029.09.2020CN
Publication Language Chinese (zh)
Filing Language Chinese (ZH)
Designated States
Title
(EN) TEMPERATURE RATE OF CHANGE CONTROL APPARATUS AND METHOD, AND SEMICONDUCTOR PROCESS DEVICE
(FR) APPAREIL ET PROCÉDÉ DE RÉGULATION DE VITESSE DE VARIATION DE TEMPÉRATURE ET DISPOSITIF DE TRAITEMENT DE SEMI-CONDUCTEUR
(ZH) 温度变化速率控制装置、方法及半导体工艺设备
Abstract
(EN) Disclosed are a temperature rate of change control apparatus and method, and a semiconductor process device. The apparatus comprises: a temperature monitoring unit used for acquiring in real time the temperature of a wafer located in a process chamber; a controller used for calculating the rate of change of the temperature of the wafer according to the temperature acquired by the temperature monitoring unit, wherein if the rate of change of the temperature is outside of a set rate of change range of the temperature, a first control signal is sent to an inflation mechanism and/or a second control signal is sent to an extraction mechanism so as to control the rate of change of the temperature to be within the rate of change range of the temperature; the inflation mechanism used for introducing a gas into the process chamber according to the received first control signal so as to control the rate of change of the temperature of the wafer by means of adjusting air pressure; and the extraction mechanism used for extracting the gas according to the received second control signal so as to control the rate of change of the temperature of the wafer by means of adjusting the air pressure. The present invention accurately controls the cooling rate of a silicon wafer, and can prevent the problem of particle pollution.
(FR) Sont divulgués un appareil et un procédé de régulation de vitesse de variation de température et un dispositif de traitement de semi-conducteur. L'appareil comprend : une unité de surveillance de température utilisée pour acquérir en temps réel la température d'une tranche située dans une chambre de traitement ; un dispositif de commande utilisé pour calculer la vitesse de variation de la température de la tranche en fonction de la température acquise par l'unité de surveillance de température, si la vitesse de variation de la température est en dehors d'une plage définie de vitesse de variation de la température, un premier signal de commande étant envoyé à un mécanisme de gonflage et/ou un second signal de commande étant envoyé à un mécanisme d'extraction de façon à réguler la vitesse de variation de la température pour qu'elle se situe à l'intérieur de la plage de vitesse de variation de la température ; le mécanisme de gonflage étant utilisé pour introduire un gaz dans la chambre de traitement en fonction du premier signal de commande reçu de façon à réguler la vitesse de variation de la température de la tranche au moyen de l'ajustement de la pression d'air ; et le mécanisme d'extraction étant utilisé pour extraire le gaz en fonction du second signal de commande reçu de façon à réguler la vitesse de variation de la température de la tranche au moyen de l'ajustement de la pression d'air. La présente invention régule avec précision la vitesse de refroidissement d'une tranche de silicium et peut empêcher le problème de pollution par des particules.
(ZH) 本发明公开了一种温度变化速率控制装置、方法及半导体工艺设备。该装置包括:温度监测单元,用于实时获取位于工艺腔室内晶圆的温度;控制器,用于根据温度监测单元获取的温度计算晶圆的温度变化速率,若温度变化速率在设定的温度变化速率范围之外,则向充气机构发送第一控制信号和/或向抽气机构发送第二控制信号,以将温度变化速率控制在温度变化速率范围内;充气机构,用于根据接收到的第一控制信号向工艺腔室内通入气体,以通过调整气压来控制晶圆的温度变化速率;抽气机构,用于根据接收到的第二控制信号进行抽气,以通过调整气压来控制晶圆的温度变化速率。本发明实现对硅片降温速率的精确控制,且可避免颗粒污染问题。
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