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1. WO2022068350 - HETEROJUNCTION BATTERY, PREPARATION METHOD THEREFOR, AND APPLICATION THEREOF

Publication Number WO/2022/068350
Publication Date 07.04.2022
International Application No. PCT/CN2021/108942
International Filing Date 28.07.2021
IPC
H01L 31/0224 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0224Electrodes
H01L 31/0236 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0236Special surface textures
H01L 31/0745 2012.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic conversion devices
06characterised by at least one potential-jump barrier or surface barrier
072the potential barriers being only of the PN heterojunction type
0745comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
H01L 31/20 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
20such devices or parts thereof comprising amorphous semiconductor material
CPC
H01L 31/022425
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0224Electrodes
022408for devices characterised by at least one potential jump barrier or surface barrier
022425for solar cells
H01L 31/02366
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0236Special surface textures
02366of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
H01L 31/0745
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic [PV] conversion devices
06characterised by at least one potential-jump barrier or surface barrier
072the potential barriers being only of the PN heterojunction type
0745comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
H01L 31/202
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
20such devices or parts thereof comprising amorphous semiconductor materials
202including only elements of Group IV of the Periodic System
Y02E 10/50
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
10Energy generation through renewable energy sources
50Photovoltaic [PV] energy
Y02P 70/50
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
70Climate change mitigation technologies in the production process for final industrial or consumer products
50Manufacturing or production processes characterised by the final manufactured product
Applicants
  • 东方日升(常州)新能源有限公司 RISEN ENERGY (CHANGZHOU) CO., LTD. [CN]/[CN]
Inventors
  • 黄强 HUANG, Qiang
  • 崔艳峰 CUI, Yanfeng
  • 谷士斌 GU, Shibin
  • 蔡涔 CAI, Cen
  • 任明冲 REN, Mingchong
  • 周学谦 ZHOU, Xueqian
  • 张莹 ZHANG, Ying
Agents
  • 杭州华进联浙知识产权代理有限公司 ADVANCE CHINA IP LAW OFFICE (HANGZHOU)
Priority Data
202011053423.129.09.2020CN
Publication Language Chinese (zh)
Filing Language Chinese (ZH)
Designated States
Title
(EN) HETEROJUNCTION BATTERY, PREPARATION METHOD THEREFOR, AND APPLICATION THEREOF
(FR) BATTERIE À HÉTÉROJONCTION, SON PROCÉDÉ DE PRÉPARATION ET SON APPLICATION
(ZH) 异质结电池及其制备方法和应用
Abstract
(EN) A heterojunction battery, a preparation method therefor, and an application thereof. The heterojunction battery comprises a substrate (10), a first intrinsic amorphous silicon layer (20), an N-type doped amorphous silicon layer (30), a first transparent conductive oxide layer (60), a second intrinsic amorphous silicon layer (40), a P-type doped amorphous silicon layer (50), a second transparent conductive oxide layer (70), and a dielectric thin film (90). The heterojunction battery (100) further comprises a metal mesh (80), the metal mesh (80) penetrating through the dielectric thin film (90) and being fixedly connected to the first transparent conductive oxide layer (60) and the second transparent conductive oxide layer (70). The metal mesh (80) is composed of several first metal wires (8011) and several second metal wires (8012). The first metal wires (8011) are perpendicular to the second metal wires (8012).
(FR) L'invention concerne une batterie à hétérojonction, son procédé de préparation et son application. La batterie à hétérojonction comprend un substrat (10), une première couche de silicium amorphe intrinsèque (20), une couche de silicium amorphe dopée de type N (30), une première couche d'oxyde conducteur transparent (60), une seconde couche de silicium amorphe intrinsèque (40), une couche de silicium amorphe dopée de type P (50), une seconde couche d'oxyde conducteur transparent (70), et un film mince diélectrique (90). La batterie à hétérojonction (100) comprend en outre une maille métallique (80), la maille métallique (80) pénétrant à travers la couche mince diélectrique (90) et étant reliée de manière fixe à la première couche d'oxyde conducteur transparent (60) et à la seconde couche d'oxyde conducteur transparent (70). La maille métallique (80) est composée de plusieurs premiers fils métalliques (8011) et de plusieurs seconds fils métalliques (8012). Les premiers fils métalliques (8011) sont perpendiculaires aux seconds fils métalliques (8012).
(ZH) 一种异质结电池及其制备方法和应用。该异质结电池包括衬底(10)、第一本征非晶硅层(20)、N型掺杂非晶硅层(30)、第一透明导电氧化物层(60)、第二本征非晶硅层(40)、P型掺杂非晶硅层(50)、第二透明导电氧化物层(70)以及介电薄膜(90),该异质结电池(100)还包括金属网(80),金属网(80)穿透介电薄膜(90)并分别与第一透明导电氧化物层(60)以及第二透明导电氧化物层(70)固定连接,其中,金属网(80)由若干第一金属丝(8011)和若干第二金属丝(8012)组成,第一金属丝(8011)与第二金属丝(8012)垂直。
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