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1. WO2022050073 - JOINT STRUCTURE

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Publication Number WO/2022/050073
Publication Date 10.03.2022
International Application No. PCT/JP2021/030439
International Filing Date 19.08.2021
IPC
H01L 21/52 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/06-H01L21/326162
52Mounting semiconductor bodies in containers
H01L 21/60 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/06-H01L21/326162
60Attaching leads or other conductive members, to be used for carrying current to or from the device in operation
CPC
H01L 21/52
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, ; e.g. sealing of a cap to a base of a container
52Mounting semiconductor bodies in containers
H01L 21/60
Applicants
  • ＴＤＫ株式会社 TDK CORPORATION [JP]/[JP]
Inventors
  • 葛西　諒平 KASAI Ryohei
  • 及川　勝貴 OIKAWA Masaki
  • 谷口　晋 TANIGUCHI Susumu
  • 川畑　賢一 KAWABATA Kenichi
Agents
  • 長谷川　芳樹 HASEGAWA Yoshiki
  • 黒木　義樹 KUROKI Yoshiki
  • 三上　敬史 MIKAMI Takafumi
Priority Data
2020-14891004.09.2020JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) JOINT STRUCTURE
(FR) STRUCTURE DE JOINT
(JA) 接合構造
front page image
Abstract
(EN) This joint structure is obtained by joining an electronic component and a wiring substrate to each other. The joint structure is provided with: a base material of the electronic component; a base material of the wiring substrate; and a joint part that includes at least an electrode of the electronic component and an electrode of the wiring substrate and that joins the base material of the electronic component and the base material of the wiring substrate to each other. The joint part has a material having an absorption coefficient of not less than 2×10^5cm-1 at 250 to 1000 nm. The base material of at least one component of the electronic component and the wiring substrate is formed from a material having an absorption coefficient of not more than 1.5×10^5cm-1 at 250 to 1000 nm.
(FR) Cette structure de joint est obtenue en joignant un composant électronique et un substrat de câblage l'un à l'autre. La structure de joint comprend : un matériau de base du composant électronique ; un matériau de base du substrat de câblage ; et une partie de joint qui comprend au moins une électrode du composant électronique et une électrode du substrat de câblage et qui joint le matériau de base du composant électronique et le matériau de base du substrat de câblage l'un à l'autre. La partie de joint a un matériau ayant un coefficient d'absorption non inférieur à 2×10^5 cm-1 à une valeur de 250 à 1000 nm. Le matériau de base d'au moins un composant du composant électronique et du substrat de câblage est constitué d'un matériau ayant un coefficient d'absorption de pas plus de 1.5×10^5 cm-1 à une valeur de 250 à 1000 nm.
(JA) 接合構造は、電子部品と配線基板とが接合した接合構造であって、電子部品の基材と、配線基板の基材と、少なくとも電子部品の電極、及び配線基板の電極を含み、電子部品の基材及び配線基板の基材同士を接合する接合部と、を備え、接合部は、２５０～１０００ｎｍの吸収係数が２×１０^５ｃｍ－１以上の材質を有しており、電子部品及び配線基板の少なくとも一方の部品の基材は、２５０～１０００ｎｍの吸収係数が１．５×１０^５ｃｍ－１以下の材質からなる。
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