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1. WO2022048134 - DEVICE HAVING FERROELECTRIC OR NEGATIVE CAPACITANCE MATERIAL, MANUFACTURING METHOD, AND ELECTRONIC DEVICE

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Publication Number WO/2022/048134
Publication Date 10.03.2022
International Application No. PCT/CN2021/082328
International Filing Date 23.03.2021
IPC
H01L 29/78 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
H01L 21/336 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334Multistep processes for the manufacture of devices of the unipolar type
335Field-effect transistors
336with an insulated gate
CPC
H01L 29/66545
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
66007Multistep manufacturing processes
66075of devices having semiconductor bodies comprising group 14 or group 13/15 materials
66227the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
66409Unipolar field-effect transistors
66477with an insulated gate, i.e. MISFET
66545using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
H01L 29/66568
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
66007Multistep manufacturing processes
66075of devices having semiconductor bodies comprising group 14 or group 13/15 materials
66227the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
66409Unipolar field-effect transistors
66477with an insulated gate, i.e. MISFET
66568Lateral single gate silicon transistors
H01L 29/78391
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
78391the gate comprising a layer which is used for its ferroelectric properties
Applicants
  • 中国科学院微电子研究所 INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES [CN]/[CN]
Inventors
  • 朱慧珑 ZHU, Huilong
  • 黄伟兴 HUANG, Weixing
Agents
  • 中科专利商标代理有限责任公司 CHINA SCIENCE PATENT & TRADEMARK AGENT LTD.
Priority Data
202010932063.607.09.2020CN
Publication Language Chinese (zh)
Filing Language Chinese (ZH)
Designated States
Title
(EN) DEVICE HAVING FERROELECTRIC OR NEGATIVE CAPACITANCE MATERIAL, MANUFACTURING METHOD, AND ELECTRONIC DEVICE
(FR) DISPOSITIF AYANT UN MATÉRIAU À CAPACITÉ FERROÉLECTRIQUE OU NÉGATIVE, PROCÉDÉ DE FABRICATION ET DISPOSITIF ÉLECTRONIQUE
(ZH) 带铁电或负电容材料的器件及制造方法及电子设备
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Abstract
(EN) Disclosed are a semiconductor device having a ferroelectric or negative capacitance material layer on a sidewall of a gate electrode, a manufacturing method therefor, and an electronic device comprising the semiconductor device. According to an embodiment, the semiconductor device can comprise: a substrate; a gate electrode that is formed on the substrate; a ferroelectric or negative capacitance material layer that is formed on a sidewall of the gate electrode; and a source region and a drain region that are located on the substrate and are on opposite sides of the gate electrode.
(FR) Un dispositif à semi-conducteur ayant une couche de matériau à capacité ferroélectrique ou négative sur une paroi latérale d'une électrode de grille, son procédé de fabrication et un dispositif électronique comprenant le dispositif à semi-conducteur sont divulgués. Selon un mode de réalisation, le dispositif à semi-conducteur peut comprendre : un substrat ; une électrode de grille qui est formée sur le substrat ; une couche de matériau à capacité ferroélectrique ou négative qui est formée sur une paroi latérale de l'électrode de grille ; et une région de source et une région de drain qui sont situées sur le substrat et sont sur des côtés opposés de l'électrode de grille.
(ZH) 公开了一种栅电极侧壁上具有铁电或负电容材料层的半导体器件及其制造方法及包括这种半导体器件的电子设备。根据实施例，半导体器件可以包括：衬底；在衬底上形成的栅电极；在栅电极的侧壁上形成的铁电或负电容材料层；以及衬底上位于栅电极相对两侧的源区和漏区。
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