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1. WO2022047206 - SUBSTRATE COMPRISING ACOUSTIC RESONATORS CONFIGURED AS AT LEAST ONE ACOUSTIC FILTER

Publication Number WO/2022/047206
Publication Date 03.03.2022
International Application No. PCT/US2021/048024
International Filing Date 27.08.2021
IPC
H03H 9/05 2006.1
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
02Details
05Holders or supports
H03H 9/10 2006.1
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
02Details
05Holders or supports
10Mounting in enclosures
H03H 9/60 2006.1
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
46Filters
54comprising resonators of piezo-electric or electrostrictive material
58Multiple crystal filters
60Electric coupling means therefor
H03H 3/02 2006.1
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
3Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
007for the manufacture of electromechanical resonators or networks
02for the manufacture of piezo-electric or electrostrictive resonators or networks
H03H 9/02 2006.1
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
02Details
H03H 9/56 2006.1
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
46Filters
54comprising resonators of piezo-electric or electrostrictive material
56Monolithic crystal filters
CPC
H03H 2003/0071
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
3Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
007for the manufacture of electromechanical resonators or networks
0071of bulk acoustic wave and surface acoustic wave elements in the same process
H03H 3/02
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
3Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
007for the manufacture of electromechanical resonators or networks
02for the manufacture of piezo-electric or electrostrictive resonators or networks
H03H 3/08
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
3Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
007for the manufacture of electromechanical resonators or networks
08for the manufacture of resonators or networks using surface acoustic waves
H03H 9/02559
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
02Details
02535of surface acoustic wave devices
02543Characteristics of substrate, e.g. cutting angles
02559of lithium niobate or lithium-tantalate substrates
H03H 9/0504
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
02Details
05Holders; Supports
0504for bulk acoustic wave devices
H03H 9/0561
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
02Details
05Holders; Supports
0538Constructional combinations of supports or holders with electromechanical or other electronic elements
0547consisting of a vertical arrangement
0561consisting of a multilayered structure
Applicants
  • QUALCOMM INCORPORATED [US]/[US]
Inventors
  • KIM, Jonghae
  • LAN, Je-Hsiung
  • DUTTA, Ranadeep
Agents
  • VU, Kenneth
Priority Data
17/008,32031.08.2020US
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) SUBSTRATE COMPRISING ACOUSTIC RESONATORS CONFIGURED AS AT LEAST ONE ACOUSTIC FILTER
(FR) SUBSTRAT COMPRENANT DES RÉSONATEURS ACOUSTIQUES CONFIGURÉS COMME AU MOINS UN FILTRE ACOUSTIQUE
Abstract
(EN) A substrate (202) that includes an encapsulation layer (203), a first acoustic resonator (205), a second acoustic resonator (207), at least one first dielectric layer (240), a plurality of first interconnects (244), at least one second dielectric layer (260), and a plurality of second interconnects (264). The first acoustic resonator is located in the encapsulation layer. The first acoustic resonator includes a first piezoelectric substrate (250) comprising a first thickness. The second acoustic resonator (207) is located in the encapsulation layer. The second acoustic resonator includes a second piezoelectric substrate (270) comprising a second thickness that is different than the first thickness. The at least one first dielectric layer is coupled to a first surface of the encapsulation layer. The plurality of first interconnects is coupled to the first surface of the encapsulation layer. The plurality of first interconnects is located at least in the at least one first dielectric layer.
(FR) La présente invention concerne un substrat (202) qui comprend une couche d'encapsulation (203), un premier résonateur acoustique (205), un deuxième résonateur acoustique (207), au moins une première couche diélectrique (240), une pluralité de premières interconnexions (244), au moins une deuxième couche diélectrique (260) et une pluralité de deuxièmes interconnexions (264). Le premier résonateur acoustique est situé dans la couche d'encapsulation. Le premier résonateur acoustique comprend un premier substrat piézoélectrique (250) ayant une première épaisseur. Le deuxième résonateur acoustique (207) est situé dans la couche d'encapsulation. Le deuxième résonateur acoustique comprend un deuxième substrat piézoélectrique (270) ayant une deuxième épaisseur qui est différente de la première épaisseur. L'au moins une première couche diélectrique est couplée à une première surface de la couche d'encapsulation. La pluralité de premières interconnexions est couplée à la première surface de la couche d'encapsulation. La pluralité de premières interconnexions est située au moins dans la ou les premières couches diélectriques.
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