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1. WO2022044518 - PLASMA ETCHING METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT

Publication Number WO/2022/044518
Publication Date 03.03.2022
International Application No. PCT/JP2021/023959
International Filing Date 24.06.2021
IPC
H01L 21/3065 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
3065Plasma etching; Reactive-ion etching
CPC
H01L 21/3065
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
302to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
3065Plasma etching; Reactive-ion etching
Applicants
  • 昭和電工株式会社 SHOWA DENKO K.K. [JP]/[JP]
Inventors
  • 松井 一真 MATSUI Kazuma
  • 岡 優希 OKA Yuki
Agents
  • 田中 秀▲てつ▼ TANAKA Hidetetsu
  • 森 哲也 MORI Tetsuya
Priority Data
2020-14594831.08.2020JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) PLASMA ETCHING METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT
(FR) PROCÉDÉ DE GRAVURE AU PLASMA ET PROCÉDÉ DE FABRICATION D'UN ÉLÉMENT SEMI-CONDUCTEUR
(JA) プラズマエッチング方法及び半導体素子の製造方法
Abstract
(EN) Provided is a plasma etching method capable of selectively etching an etching object containing an oxide of at least one among tin and indium, compared to a non-etching object. The plasma etching method comprises an etching step in which an etching gas containing an unsaturated compound having a fluorine atom and a bromine atom in the molecule is brought into contact with, in the presence of plasma, a member to be etched having an etching object to be etched by the etching gas and a non-etching object not to be etched by the etching gas, etching is performed while applying bias power greater than 0 W to a lower electrode supporting the member to be etched, and the etching object is selectively etched compared to the non-etching object. The etching object contains an oxide of at least one among tin and indium, and the non-etching object contains at least one among a silicon-containing compound and a photoresist.
(FR) L'invention concerne un procédé de gravure au plasma pouvant graver sélectivement un objet de gravure contenant un oxyde d'au moins un élément parmi l'étain et l'indium, par rapport à un objet de non-gravure. Le procédé de gravure au plasma comprend une étape de gravure dans laquelle un gaz de gravure contenant un composé insaturé ayant un atome de fluor et un atome de brome dans la molécule est mis en contact, en présence de plasma, avec un élément devant être gravé ayant un objet de gravure devant être gravé par le gaz de gravure et un objet de non-gravure ne devant pas être gravé par le gaz de gravure, la gravure est effectuée tout en appliquant une puissance de polarisation supérieure à 0 W à une électrode inférieure soutenant l'élément devant être gravé, et l'objet de gravure est sélectivement gravé par comparaison avec l'objet de non-gravure. L'objet de gravure contient un oxyde d'au moins un élément parmi l'étain et l'indium, et l'objet de non-gravure contient au moins un élément parmi un composé contenant du silicium et une résine photosensible.
(JA) スズ及びインジウムの少なくとも一方の酸化物を含有するエッチング対象物を非エッチング対象物に比べて選択的にエッチングすることができるプラズマエッチング方法を提供する。プラズマエッチング方法は、フッ素原子及び臭素原子を分子内に有する不飽和化合物を含有するエッチングガスを、エッチングガスによるエッチングの対象であるエッチング対象物とエッチングガスによるエッチングの対象ではない非エッチング対象物とを有する被エッチング部材に、プラズマの存在下で接触させ、被エッチング部材を支持する下部電極に0W超過のバイアスパワーを印加しつつエッチングを行い、非エッチング対象物に比べてエッチング対象物を選択的にエッチングするエッチング工程を備える。エッチング対象物はスズ及びインジウムの少なくとも一方の酸化物を含有し、非エッチング対象物は含ケイ素化合物及びフォトレジストの少なくとも一方を含有する。
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