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1. WO2022030469 - COMPOSITION FOR FORMING RESIST UNDERLAYER FILM

Publication Number WO/2022/030469
Publication Date 10.02.2022
International Application No. PCT/JP2021/028714
International Filing Date 03.08.2021
IPC
C08G 12/08 2006.1
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
12Condensation polymers of aldehydes or ketones with only compounds containing hydrogen attached to nitrogen
02of aldehydes
04with acyclic or carbocyclic compounds
06Amines
08aromatic
G03F 7/11 2006.1
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
09characterised by structural details, e.g. supports, auxiliary layers
11having cover layers or intermediate layers, e.g. subbing layers
G03F 7/20 2006.1
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20Exposure; Apparatus therefor
G03F 7/26 2006.1
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
26Processing photosensitive materials; Apparatus therefor
CPC
C08G 12/08
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
12Condensation polymers of aldehydes or ketones with only compounds containing hydrogen attached to nitrogen
02of aldehydes
04with acyclic or carbocyclic compounds
06Amines
08aromatic
G03F 7/11
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
09characterised by structural details, e.g. supports, auxiliary layers
11having cover layers or intermediate layers, e.g. subbing layers
G03F 7/20
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20Exposure; Apparatus therefor
G03F 7/26
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
26Processing photosensitive materials; Apparatus therefor
Applicants
  • 日産化学株式会社 NISSAN CHEMICAL CORPORATION [JP]/[JP]
Inventors
  • ▲徳▼永 光 TOKUNAGA Hikaru
  • 中島 誠 NAKAJIMA Makoto
  • 西巻 裕和 NISHIMAKI Hirokazu
Agents
  • 特許業務法人 津国 TSUKUNI & ASSOCIATES
  • 山村 大介 YAMAMURA Daisuke
Priority Data
2020-13289605.08.2020JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) COMPOSITION FOR FORMING RESIST UNDERLAYER FILM
(FR) COMPOSITION POUR FORMATION DE FILM DE SOUS-COUCHE DE RÉSERVE
(JA) レジスト下層膜形成組成物
Abstract
(EN) Provided is a novel composition for forming a resist underlayer film, which is reduced in the amount of sublimated substances that contaminate a device, is improved in the in-plane uniform coatability of a film to be coated thereon, exhibits satisfactory resistance to a chemical solution used in a resist under layer film, and can exhibit other satisfactory properties. This composition for forming a resist underlayer film comprises: a solvent; and a polymer containing a unit structure (A) represented by formula (1) (wherein Ar1 and Ar2 independently represent a benzene ring or a naphthalene ring; R1 and R2 independently represent a group substituted by a hydrogen atom on the ring of each of Ar1 and Ar2; R4 is selected from the group consisting of a hydrogen atom, a trifluoromethyl group, an aryl group having 6 to 40 carbon atoms, and a heterocyclic group; R5 is selected from the group consisting of a hydrogen atom, a trifluoromethyl group, an aryl group having 6 to 40 carbon atoms, and a heterocyclic group; and n1 and n2 independently represent an integer of 0 to 3).
(FR) L'invention fournit une nouvelle composition pour formation de film de sous-couche de réserve avec laquelle la quantité de sublimé souillant un dispositif est réduite, et les propriétés d'application uniforme dans le plan d'un film de revêtement sont améliorées, et qui permet de développer d'autres caractéristiques satisfaisantes telles qu'une résistance suffisante vis-à-vis de produits chimiques mis en œuvre dans un film de sous-couche de réserve. Plus précisément, l'invention concerne une composition pour formation de film de sous-couche de réserve qui contient un solvant, et un polymère contenant à son tour une structure d'unité (A) représentée par la formule (1) (Dans la formule (1), Ar et Ar représentent chacun un cycle benzène ou un cycle naphtalène, R et R consistent chacun en des groupes substituant des atomes d'hydrogène dans les cycles de Ar et Ar, R est choisi dans un groupe constitué d'un atome d'hydrogène, d'un groupe trifluorométhyle, d'un groupe aryle de 6 à 40 atomes de carbone, et d'un groupe hétérocyclique, R est choisi dans un groupe constitué d'un atome d'hydrogène, d'un groupe trifluorométhyle, d'un groupe aryle de 6 à 40 atomes de carbone, et d'un groupe hétérocyclique, et n1 et n2 consistent chacun en des nombres entiers de 0 à 3.).
(JA) 装置を汚染する昇華物量の低減、被覆膜の面内均一塗布性の改善、かつ、レジスト下層膜にも使用される薬液に対しても十分な耐性を示す等その他の良好な特性を発揮し得る新規なレジスト下層膜形成組成物を提供する。溶剤、及び下記式(1):(式(1)中、 Ar、及びArはそれぞれベンゼン環、又はナフタレン環を表し、R、及びRはそれぞれAr、及びArの環上の水素原子を置換する基であり、Rは水素原子、トリフルオロメチル基、炭素原子数6乃至40のアリール基、及び複素環基からなる群より選択され、Rは水素原子、トリフルオロメチル基、炭素原子数6乃至40のアリール基、及び複素環基からなる群より選択され、n1及びn2はそれぞれ0乃至3の整数である。) で表される単位構造(A)を含むポリマーを含むレジスト下層膜形成組成物。
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