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1. WO2022029437 - LED DEVICE AND METHOD OF MANUFACTURING AN LED DEVICE

Publication Number WO/2022/029437
Publication Date 10.02.2022
International Application No. PCT/GB2021/052023
International Filing Date 04.08.2021
IPC
H01L 33/16 2010.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
16with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
H01L 33/32 2010.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
26Materials of the light emitting region
30containing only elements of group III and group V of the periodic system
32containing nitrogen
H01L 33/00 2010.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H01L 27/15 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
15including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
CPC
H01L 27/153
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
15including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
153in a repetitive configuration, e.g. LED bars
H01L 33/007
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
005Processes
0062for devices with an active region comprising only III-V compounds
0066with a substrate not being a III-V compound
007comprising nitride compounds
H01L 33/16
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
16with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
H01L 33/32
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
26Materials of the light emitting region
30containing only elements of group III and group V of the periodic system
32containing nitrogen
Applicants
  • PORO TECHNOLOGIES LTD [GB]/[GB]
Inventors
  • LIU, Yingjun
  • ZHU, Tongtong
  • ALI, Muhammad
Agents
  • REDDIE & GROSE LLP
Priority Data
2012098.604.08.2020GB
2012103.404.08.2020GB
2012105.904.08.2020GB
2012108.304.08.2020GB
2012110.904.08.2020GB
2018016.216.11.2020GB
2102012.812.02.2021GB
2102017.712.02.2021GB
2102021.912.02.2021GB
PCT/GB2021/05014722.01.2021GB
PCT/GB2021/05015222.01.2021GB
PCT/GB2021/05015822.01.2021GB
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) LED DEVICE AND METHOD OF MANUFACTURING AN LED DEVICE
(FR) DISPOSITIF À DEL ET PROCÉDÉ DESTINÉ À FABRIQUER UN DISPOSITIF À DEL
Abstract
(EN) A method of manufacturing an LED device comprises the steps of: forming a second LED structure over a first LED structure, in which at least one of the first or second LED structures is positioned over a porous region of III-nitride material. An LED device comprises a second LED structure positioned over a first LED structure, in which at least one of the first or second LED structures is positioned over a porous region of III-nitride material. An array of LEDs and a three-colour LED device are also provided.
(FR) L’invention concerne un procédé destiné à fabriquer un dispositif à DEL dont les étapes consistent : à former une deuxième structure de DEL au-dessus d’une première structure de DEL, dans laquelle au moins une structure parmi la première ou la deuxième structure de DEL est positionnée au-dessus d’une zone poreuse de matériau de nitrure du groupe III. Un dispositif à DEL comprend une deuxième structure de DEL positionnée au-dessus d’une première structure de DEL, dans laquelle au moins une structure parmi la première ou la deuxième structure de DEL est positionnée au-dessus d’une zone poreuse de matériau de nitrure du groupe III. L’invention concerne également une barrette de DEL et un dispositif à DEL tricolore.
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