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1. WO2022029254 - DIODE LASER HAVING A CURRENT SHIELD

Publication Number WO/2022/029254
Publication Date 10.02.2022
International Application No. PCT/EP2021/071921
International Filing Date 05.08.2021
IPC
H01S 5/22 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
20Structure or shape of the semiconductor body to guide the optical wave
22having a ridge or a stripe structure
CPC
H01S 5/2224
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
20Structure or shape of the semiconductor body to guide the optical wave ; ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
22having a ridge or stripe structure
2205comprising special burying or current confinement layers
2222having special electric properties
2224semi-insulating semiconductors
H01S 5/2227
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
20Structure or shape of the semiconductor body to guide the optical wave ; ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
22having a ridge or stripe structure
2205comprising special burying or current confinement layers
2222having special electric properties
2227special thin layer sequence
Applicants
  • FERDINAND-BRAUN-INSTITUT GGMBH LEIBNIZ-INSTITUT FÜR HÖCHSTFREQUENZTECHNIK [DE]/[DE]
Inventors
  • DELLA CASA, Pietro
  • ELATTAR, Mohamed
  • CRUMP, Paul
  • WENZEL, Hans
Agents
  • GULDE & PARTNER PATENT- UND RECHTSANWALTSKANZLEI MBB
Priority Data
10 2020 120 703.405.08.2020DE
Publication Language German (de)
Filing Language German (DE)
Designated States
Title
(DE) DIODENLASER MIT STROMBLENDE
(EN) DIODE LASER HAVING A CURRENT SHIELD
(FR) LASER À DIODE DOTÉ D'UNE PROTECTION CONTRE LE COURANT
Abstract
(DE) Die vorliegende Erfindung betrifft einen Diodenlaser mit einer Stromblende und insbesondere einen Diodenlaser mit einer angepassten „p-n-p"- bzw. „n-p-n"-Struktur als Stromblende zur Reduzierung der Tunnelwahrscheinlichkeit. Ein erfindungsgemäßer Diodenlaser umfasst eine aktive Schicht (16) und eine außerhalb der aktiven Schicht (16) schichtförmig ausgebildete Stromblende (30) aus einem entgegen seiner Umgebung dotierten Material für eine räumlich selektive Bestromung der aktiven Schicht (16) zwischen einem n-Substrat (10) und einem p-Kontakt (24); wobei die Stromblende (30) über eine intrinsische Außenschicht (32, 38) von angrenzenden Schichten getrennt ist.
(EN) The invention relates to a diode laser comprising a current shield and, in particular, a diode laser comprising an adapted PNP or NPN structure as a current shield for reducing tunneling probability. The diode laser according to the invention comprises an active layer (16) and a current shield (3) formed in layers outside the active layer (16) and made of a material that is doped against the environment for a spatially selective energisation of the active layer (16) between an n-substrate (10) and a p-contact (24), wherein the current shield (30) is separated from adjacent layers by an intrinsic outer layer (32, 38).
(FR) L'invention concerne un laser à diode comprenant une protection contre le courant et, en particulier, un laser à diode comprenant une structure PNP ou NPN adaptée comme protection contre le courant pour réduire la probabilité de tunnellisation. Le laser à diode selon l'invention comprend une couche active (16) et une protection contre le courant (3) formée dans des couches à l'extérieur de la couche active (16) et constituée d'un matériau qui est dopé contre l'environnement pour une excitation spatialement sélective de la couche active (16) entre un substrat n (10) et un contact p (24), la protection contre le courant (30) étant séparée de couches adjacentes par une couche externe intrinsèque (32, 38).
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