Processing

Please wait...

Settings

Settings

Goto Application

1. WO2022028080 - WAFER-LEVEL SURFACE ACOUSTIC WAVE FILTER AND PACKAGING METHOD

Publication Number WO/2022/028080
Publication Date 10.02.2022
International Application No. PCT/CN2021/098266
International Filing Date 04.06.2021
IPC
H03H 9/10 2006.1
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
02Details
05Holders or supports
10Mounting in enclosures
H03H 9/64 2006.1
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
46Filters
64using surface acoustic waves
H03H 9/02 2006.1
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
02Details
CPC
H01L 23/49816
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; ; Selection of materials therefor
488consisting of soldered ; or bonded; constructions
498Leads, ; i.e. metallisations or lead-frames; on insulating substrates, ; e.g. chip carriers
49811Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
49816Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
H01L 23/49827
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; ; Selection of materials therefor
488consisting of soldered ; or bonded; constructions
498Leads, ; i.e. metallisations or lead-frames; on insulating substrates, ; e.g. chip carriers
49827Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
H03H 3/08
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
3Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
007for the manufacture of electromechanical resonators or networks
08for the manufacture of resonators or networks using surface acoustic waves
H03H 9/02574
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
02Details
02535of surface acoustic wave devices
02543Characteristics of substrate, e.g. cutting angles
02574of combined substrates, multilayered substrates, piezo-electrical layers on not-piezo- electrical substrate
H03H 9/02834
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
02Details
02535of surface acoustic wave devices
02818Means for compensation or elimination of undesirable effects
02834of temperature influence
H03H 9/1064
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
02Details
05Holders; Supports
10Mounting in enclosures
1064for surface acoustic wave [SAW] devices
Applicants
  • 展讯通信(上海)有限公司 SPREADTRUM COMMUNICATIONS (SHANGHAI) CO., LTD. [CN]/[CN]
Inventors
  • 陈景 CHEN, Jing
  • 梁聪 LIANG, Cong
Agents
  • 北京同立钧成知识产权代理有限公司 LEADER PATENT & TRADEMARK FIRM
Priority Data
202010787875.607.08.2020CN
Publication Language Chinese (zh)
Filing Language Chinese (ZH)
Designated States
Title
(EN) WAFER-LEVEL SURFACE ACOUSTIC WAVE FILTER AND PACKAGING METHOD
(FR) FILTRE À ONDES ACOUSTIQUES DE SURFACE AU NIVEAU DE LA GALETTE ET PROCÉDÉ DE CONDITIONNEMENT
(ZH) 晶圆级声表面波滤波器与封装方法
Abstract
(EN) Embodiments of the present application provide a wafer-level surface acoustic wave filter and a packaging method. The surface acoustic wave filter comprises a wafer, an electrode layer, a supporting enclosing wall, and a cover plate, wherein the wafer comprises a substrate layer and a piezoelectric film layer which are combined in a wafer bonding mode; the electrode layer is provided on a surface of the piezoelectric film layer; a sealed cavity is formed between the piezoelectric film layer and the cover plate by means of enclosing of the supporting enclosing wall; the cover plate comprises at least one first material layer, and the material of the first material layer is the same as the material of the substrate layer. In the embodiments of the present application, the size of the surface acoustic wave filter can be effectively deceased in a wafer-level packaging mode; the substrate layer and the piezoelectric film layer are combined in the wafer bonding mode, and thus the performance of the surface acoustic wave filter based on such a wafer is less affected by temperature; the cover plate is made of a material identical or similar to that of the wafer, such that the reliability and the temperature stability of the device are enhanced.
(FR) Des modes de réalisation de la présente invention concernent un filtre à ondes acoustiques de surface au niveau de la galette et un procédé de conditionnement. Le filtre à ondes acoustiques de surface comprend une galette, une couche d'électrode, une paroi d'enceinte de support et une plaque de protection, la galette comprenant une couche de substrat et une couche de film piézoélectrique qui sont combinées dans un mode de liaison de galette ; la couche d'électrode est disposée sur une surface de la couche de film piézoélectrique ; une cavité étanche est formée entre la couche de film piézoélectrique et la plaque de protection au moyen de l'enveloppement de la paroi d'enceinte de support ; la plaque de protection comprend au moins une première couche de matériau, et le matériau de la première couche de matériau est le même que le matériau de la couche de substrat. Dans les modes de réalisation de la présente invention, la taille du filtre à ondes acoustiques de surface peut être efficacement diminuée dans un mode de conditionnement au niveau de la galette ; la couche de substrat et la couche de film piézoélectrique sont combinées dans le mode de liaison de galette, et ainsi les performances du filtre à ondes acoustiques de surface sur la base d'une telle galette sont moins affectées par la température ; la plaque de protection est constituée d'un matériau identique ou similaire à celui de la galette, de sorte que la fiabilité et la stabilité de température du dispositif sont améliorées.
(ZH) 本申请实施例提供一种晶圆级声表面波滤波器与封装方法,该声表面波滤波器包括晶圆、电极层、支撑围墙及盖板;其中,晶圆包括以晶圆键合方式结合的衬底层与压电薄膜层,电极层设置于压电薄膜层的表面,支撑围墙在压电薄膜层与盖板之间包围形成密封空腔;盖板至少包括第一材料层,其采用的材料与衬底层采用的材料相同。本申请实施例中通过采用晶圆级封装方式,可以有效缩小声表面波滤波器的尺寸;衬底层与压电薄膜层以晶圆键合方式结合,基于此类晶圆的声表面波滤波器的性能受温度影响小;盖板采用与晶圆相同或类似的材料,增强了器件的可靠性和温度稳定性。
Latest bibliographic data on file with the International Bureau