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1. WO2022025161 - SILICON ETCHING LIQUID, AND METHOD FOR PRODUCING SILICON DEVICE AND METHOD FOR PROCESSING SILICON SUBSTRATE, EACH USING SAID ETCHING LIQUID

Publication Number WO/2022/025161
Publication Date 03.02.2022
International Application No. PCT/JP2021/028028
International Filing Date 29.07.2021
IPC
H01L 21/308 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
308using masks
H01L 21/306 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
CPC
H01L 21/306
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
302to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
H01L 21/308
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
302to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
308using masks
Applicants
  • 株式会社トクヤマ TOKUYAMA CORPORATION [JP]/[JP]
Inventors
  • 清家 吉貴 SEIKE, Yoshiki
  • 置塩 真奈美 OSHIO, Manami
  • 東野 誠司 TONO, Seiji
Agents
  • 特許業務法人秀和特許事務所 IP FIRM SHUWA
Priority Data
2020-13071131.07.2020JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) SILICON ETCHING LIQUID, AND METHOD FOR PRODUCING SILICON DEVICE AND METHOD FOR PROCESSING SILICON SUBSTRATE, EACH USING SAID ETCHING LIQUID
(FR) SOLUTION DE GRAVURE DE SILICIUM, ET PROCÉDÉ DE FABRICATION DE DISPOSITIF DE SILICIUM AINSI QUE PROCÉDÉ DE TRAITEMENT DE SUBSTRAT DE SILICIUM METTANT EN ŒUVRE CETTE SOLUTION DE GRAVURE DE SILICIUM
(JA) シリコンエッチング液、並びに該エッチング液を用いたシリコンデバイスの製造方法およびシリコン基板の処理方法
Abstract
(EN) A silicon etching liquid which is characterized by containing a quaternary ammonium hydroxide represented by formula (1), a quaternary ammonium salt represented by formula (2) and water, and which is also characterized in that the concentration of the quaternary ammonium salt represented by formula (2) is more than 1% by mass but not more than 50% by mass. (1): R1R2R3R4N+·OH- (In formula (1), R1, R2, R3 and R4 may be the same groups or different groups, and each represents an optionally substituted alkyl group, aryl group or a benzyl group.) (2): R5R6R7R8N+·X- (In formula (2), R5, R6, R7 and R8 may be the same groups or different groups, and each represents an optionally substituted alkyl group having from 1 to 16 carbon atoms; and X represents BF4, a fluorine atom, a chlorine atom or a bromine atom.)
(FR) L'invention concerne une solution de gravure de silicium qui est caractéristique en ce qu'elle contient un hydroxyde d'ammonium quaternaire représenté par la formule (1), un sel d'ammonium quaternaire représenté par la formule (2), et une eau, la concentration en sel d'ammonium quaternaire représenté par la formule (2) étant supérieure à 1% en masse et inférieure ou égale à 50% en masse. R・OH (1) (Dans la formule (1), R, R, R et R consistent en un groupe alkyle, un groupe aryle ou un groupe benzile ayant éventuellement un substituant, et peuvent consister en des groupes réciproquement identiques ou différents.) R・X (2) (Dans la formule (2), R, R, R et R consistent en un groupe alkyle de 1 à 16 atomes de carbone ayant éventuellement un substituant, et peuvent consister en des groupes réciproquement identiques ou différents. X consiste en BF, un atome de fluor, un atome de chlore ou un atome de brome.)
(JA) 下記式(1)で示される水酸化第四級アンモニウム、下記式(2)で示される第四級アンモニウム塩、および水を含み、かつ、前記式(2)で示される第四級アンモニウム塩の濃度が1質量%を超え、50質量%以下であることを特徴とする、シリコンエッチング液。 R・OH (1)(式(1)中、R、R、RおよびRは、置換基を有していてもよい、アルキル基、アリール基またはベンジル基であり、それぞれ同一の基であっても異なる基であってもよい。) R・X (2)(式(2)中、R、R、RおよびRは、置換基を有していてもよい炭素数1~16のアルキル基であり、それぞれ同一の基であっても、異なる基であってもよい。Xは、BF、フッ素原子、塩素原子、または臭素原子である。)
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