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1. WO2022024781 - DETECTION DEVICE

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Publication Number WO/2022/024781
Publication Date 03.02.2022
International Application No. PCT/JP2021/026599
International Filing Date 15.07.2021
IPC
H01L 27/30 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
28including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
30with components specially adapted for sensing infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation; with components specially adapted for either the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
H01L 27/146 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
H01L 31/10 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08in which radiation controls flow of current through the device, e.g. photoresistors
10characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
H01L 51/42 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
42specially adapted for sensing infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation; specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
CPC
H01L 27/146
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
H01L 27/30
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
28including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
30with components specially adapted for sensing infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation; with components specially adapted for either the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
H01L 31/10
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08in which radiation controls flow of current through the device, e.g. photoresistors
10characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
H01L 51/42
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
42specially adapted for sensing infra-red radiation, light, electro-magnetic radiation of shorter wavelength or corpuscular radiation and adapted for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation ; using organic materials as the active part, or using a combination of organic materials with other material as the active part; Multistep processes for their manufacture
Applicants
  • 株式会社ジャパンディスプレイ JAPAN DISPLAY INC. [JP]/[JP]
  • 国立大学法人東京大学 THE UNIVERSITY OF TOKYO [JP]/[JP]
Inventors
  • 樋元　健人 HIMOTO, Kento
  • 中村　卓 NAKAMURA, Takashi
  • 染谷　隆夫 SOMEYA, Takao
  • 横田　知之 YOKOTA, Tomoyuki
Agents
  • 特許業務法人酒井国際特許事務所 SAKAI INTERNATIONAL PATENT OFFICE
Priority Data
2020-12733828.07.2020JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) DETECTION DEVICE
(FR) DISPOSITIF DE DÉTECTION
(JA) 検出装置
front page image
Abstract
(EN) Provided is a detection device comprising a plurality of optical sensors arrayed on a substrate, each optical sensor comprising, stacked in a direction perpendicular to the surface of the substrate: a lower electrode; an electron transport layer; an active layer; a hole transport layer; and an upper electrode. The active layer includes an organic semiconductor. The hole transport layer includes an oxide metal layer and is disposed over and in contact with the active layer.
(FR) L'invention concerne un dispositif de détection comprenant une pluralité de capteurs optiques disposés en réseau sur un substrat, chaque capteur optique comprenant, empilés perpendiculairement à la surface du substrat : une électrode inférieure ; une couche de transport d'électrons ; une couche active ; une couche de transport de trous ; et une électrode supérieure. La couche active comprend un semiconducteur organique. La couche de transport de trous comprend une couche d'oxyde métallique et est disposée sur la couche active et en contact avec celle-ci.
(JA) 検出装置は、基板の上に配列された複数の光センサを有する検出装置であって、複数の光センサは、それぞれ、基板の表面に垂直な方向で、下部電極、電子輸送層、活性層、正孔輸送層、上部電極の順に積層されており、活性層は、有機半導体を含み、正孔輸送層は、酸化金属層を含み、活性層の上に接して設けられる。
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