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1. WO2022010824 - POWER SEMICONDUCTOR DEVICES HAVING MULTILAYER GATE DIELECTRIC LAYERS THAT INCLUDE AN ETCH STOP/FIELD CONTROL LAYER AND METHODS OF FORMING SUCH DEVICES

Publication Number WO/2022/010824
Publication Date 13.01.2022
International Application No. PCT/US2021/040415
International Filing Date 06.07.2021
IPC
H01L 29/16 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02Semiconductor bodies
12characterised by the materials of which they are formed
16including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
H01L 29/423 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
40Electrodes
41characterised by their shape, relative sizes or dispositions
423not carrying the current to be rectified, amplified or switched
H01L 29/51 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
40Electrodes
43characterised by the materials of which they are formed
49Metal-insulator semiconductor electrodes
51Insulating materials associated therewith
H01L 29/78 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
H01L 21/04 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
H01L 29/06 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02Semiconductor bodies
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
Applicants
  • CREE, INC. [US]/[US]
Inventors
  • LICHTENWALNER, Daniel Jenner
Agents
  • AYERS, D. Randal
Priority Data
16/922,19207.07.2020US
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) POWER SEMICONDUCTOR DEVICES HAVING MULTILAYER GATE DIELECTRIC LAYERS THAT INCLUDE AN ETCH STOP/FIELD CONTROL LAYER AND METHODS OF FORMING SUCH DEVICES
(FR) DISPOSITIFS À SEMI-CONDUCTEUR DE PUISSANCE AYANT DES COUCHES DIÉLECTRIQUES DE GRILLE MULTICOUCHES COMPRENANT UNE COUCHE DE COMMANDE D'ARRÊT/DE CHAMP DE GRAVURE ET PROCÉDÉS DE FORMATION DE TELS DISPOSITIFS
Abstract
(EN) A semiconductor device includes a semiconductor layer structure that comprises silicon carbide, a gate dielectric layer on the semiconductor layer structure, the gate dielectric layer including a base gate dielectric layer that is on the semiconductor layer structure and a capping gate dielectric layer on the base gate dielectric layer opposite the semiconductor layer structure, and a gate electrode on the gate dielectric layer opposite the semiconductor layer structure. A dielectric constant of the capping gate dielectric layer is higher than a dielectric constant of the base gate dielectric layer.
(FR) La présente invention concerne un dispositif à semi-conducteur qui comprend une structure de couche semi-conductrice qui comprend du carbure de silicium, une couche diélectrique de grille sur la structure de couche semi-conductrice, la couche diélectrique de grille comprenant une couche de base diélectrique de grille qui est sur la structure de couche semi-conductrice et une couche de recouvrement diélectrique de grille sur la couche de base diélectrique de grille en regard de la structure de couche semi-conductrice, et une électrode de grille sur la couche diélectrique de grille en regard de la structure de couche semi-conductrice. Une constante diélectrique de la couche de recouvrement diélectrique de grille est supérieure à une constante diélectrique de la couche de base diélectrique de grille.
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