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1. WO2022010801 - INTEGRATED ASSEMBLIES HAVING CONDUCTIVE-SHIELD-STRUCTURES BETWEEN LINEAR-CONDUCTIVE-STRUCTURES

Publication Number WO/2022/010801
Publication Date 13.01.2022
International Application No. PCT/US2021/040357
International Filing Date 02.07.2021
IPC
H01L 27/11582 2017.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
112Read-only memory structures
115Electrically programmable read-only memories; Multistep manufacturing processes therefor
11563with charge-trapping gate insulators, e.g. MNOS or NROM
11578characterised by three-dimensional arrangements, e.g. with cells on different height levels
1158with source and drain on different levels, e.g. with sloping channels
11582the channels comprising vertical portions, e.g. U-shaped channels
H01L 27/11568 2017.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
112Read-only memory structures
115Electrically programmable read-only memories; Multistep manufacturing processes therefor
11563with charge-trapping gate insulators, e.g. MNOS or NROM
11568characterised by the memory core region
H01L 27/11565 2017.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
112Read-only memory structures
115Electrically programmable read-only memories; Multistep manufacturing processes therefor
11563with charge-trapping gate insulators, e.g. MNOS or NROM
11565characterised by the top-view layout
Applicants
  • MICRON TECHNOLOGY, INC. [US]/[US]
Inventors
  • KAUSHIK, Naveen
  • KAMATA, Yoshihiko
  • HILL, Richard, J.
  • RITTER, Kyle, A.
  • IWASAKI, Tomoko, Ogura
  • LIU, Haitao
Agents
  • TAYLOR, Jennifer, J.
Priority Data
16/924,50609.07.2020US
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) INTEGRATED ASSEMBLIES HAVING CONDUCTIVE-SHIELD-STRUCTURES BETWEEN LINEAR-CONDUCTIVE-STRUCTURES
(FR) ENSEMBLES INTÉGRÉS AYANT DES STRUCTURES DE BLINDAGE CONDUCTRICES ENTRE DES STRUCTURES CONDUCTRICES LINÉAIRES
Abstract
(EN) Some embodiments include an assembly having channel- material-structures, and having memory cells along the channel- material-structures. The memory cells include charge-storage- mate rial. Linear-conductive-structures are vertically offset from the channel- material-structures and are electrically coupled with the channel- material-structures. Intervening regions are between the linear- conductive-structures. Conductive-shield-structures are within the intervening regions. The conductive-shield-structures are electrically coupled with a reference-voltage-source.
(FR) Certains modes de réalisation comprennent un ensemble ayant des structures de matériau de canal, et ayant des cellules de mémoire le long des structures de matériau de canal. Les cellules de mémoire comprennent un matériau de stockage de charge. Des structures conductrices linéaires sont verticalement décalées par rapport aux structures de matériau de canal et sont couplées électriquement aux structures de matériau de canal. Des régions intermédiaires sont présentes entre les structures conductrices linéaires. Des structures de blindage conductrices se trouvent à l'intérieur des régions intermédiaires. Les structures de blindage conductrices sont couplées électriquement à une source de tension de référence.
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