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1. WO2022010771 - HIGH TEMPERATURE BARRIER FILM FOR MOLTEN WAFER INFUSION

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Publication Number WO/2022/010771
Publication Date 13.01.2022
International Application No. PCT/US2021/040265
International Filing Date 02.07.2021
IPC
H01L 21/48 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/06-H01L21/326201
H01L 21/50 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/06-H01L21/326162
H01L 23/10 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
02Containers; Seals
10characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
H01L 23/498 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
488consisting of soldered or bonded constructions
498Leads on insulating substrates
Applicants
  • MENLO MICROSYSTEMS, INC. [US]/[US]
  • CORNING INCORPORATED [US]/[US]
Inventors
  • BALOUN, Jeff, S.
  • VAN DEN HOEK, Willibrordus, Gerardus Maria
Agents
  • MEAGHER, Timothy, J.
  • WAKIMURA, Mary, Lou
  • SMITH, James, M.
  • BROOK, David, E.
  • CARROLL, Alice, O.
Priority Data
16/922,22007.07.2020US
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) HIGH TEMPERATURE BARRIER FILM FOR MOLTEN WAFER INFUSION
(FR) PELLICULE DE BARRIÈRE À HAUTE TEMPÉRATURE POUR INFUSION DE PLAQUETTE FONDUE
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Abstract
(EN) A metallized via structure may comprise a via hole, a barrier layer deposited within the via hole, and a metallic plug disposed within the via hole. The via hole may be formed in a device package, and the via hole may be defined by at least one interior wall of the device package. The barrier layer may be disposed upon the at least one interior wall to form a barrier layer lined via hole. The metallic plug may be disposed within the barrier lined via hole by pressurized injection of a molten metal, such that the barrier layer is situated between the metallic plug and the at least one interior wall. The barrier layer may be situated to prevent the metallic plug from contacting the interior wall.
(FR) L’invention concerne une structure d’interconnexion métallique qui peut comprendre un trou d’interconnexion, une couche de barrière déposée à l’intérieur du trou d’interconnexion, et une fiche métallique déposée à l’intérieur du trou d’interconnexion. Le trou d’interconnexion peut être formé dans une capsule de dispositif, et le trou d’interconnexion peut être défini par au moins une paroi intérieure de la capsule de dispositif. La couche de barrière peut être disposée sur la ou les parois intérieures pour former un trou d’interconnexion recouvert d’une couche de barrière. La fiche métallique peut être disposée à l’intérieur du trou d’interconnexion recouvert d’une barrière par injection sous pression d’un métal fondu, de sorte que la couche de barrière est située entre la fiche métallique et la ou les parois intérieures. La couche de barrière peut être située de manière à empêcher que la fiche métallique entre en contact avec la paroi intérieure.
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