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1. WO2022010576 - HIGH PERFORMANCE TUNABLE FILTER USING GALLIUM ARSENIDE

Publication Number WO/2022/010576
Publication Date 13.01.2022
International Application No. PCT/US2021/033139
International Filing Date 19.05.2021
IPC
H03H 1/00 2006.1
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
1Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network
H03H 7/01 2006.1
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
7Multiple-port networks comprising only passive electrical elements as network components
01Frequency selective two-port networks
H03H 7/48 2006.1
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
7Multiple-port networks comprising only passive electrical elements as network components
48Networks for connecting several sources or loads, working on the same frequency or frequency band, to a common load or source
H01F 17/00 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
17Fixed inductances of the signal type
H01L 23/48 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
H01L 23/522 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
52Arrangements for conducting electric current within the device in operation from one component to another
522including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
Applicants
  • QUALCOMM INCORPORATED [US]/[US]
Inventors
  • LAN, Je-Hsiung
  • KIM, Jonghae
Agents
  • OLDS, Mark E.
Priority Data
16/922,47107.07.2020US
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) HIGH PERFORMANCE TUNABLE FILTER USING GALLIUM ARSENIDE
(FR) FILTRE ACCORDABLE HAUTE PERFORMANCE UTILISANT DE L'ARSÉNIURE DE GALLIUM
Abstract
(EN) Disclosed is a gallium arsenide, GaAs, enabled tunable filter for, e.g., 6 GHz Wi-Fi RF Frontend, with integrated high-performance varactors metal-insulator-metal, MIM, capacitors, and 3D solenoid inductors. The tunable filter comprises a hyper-abrupt variable capacitor (120), varactor, with high capacitance tuning ratio. The tunable filter also comprises a GaAs substrate in which through-GaAs-vias (160), TGV, are formed. The varactor along with the MIM capacitors and the 3D inductors (142) is formed in an upper conductive structure (150) on upper surface of the GaAs substrate. Lower conductive structure (170) comprising lower conductors is formed on lower surface of the GaAs substrate. Electrical coupling between the lower and upper conductive structures is provided by the TGVs. The tunable filter can be integrated with radio frequency front end, RFFE, devices.
(FR) L'invention concerne un filtre accordable activé par de l'arséniure de gallium (GaAs) destiné, par exemple, à un élément frontal RF de Wi-Fi à 6 GHz, comportant des varactors haute performance intégrés, des condensateurs métal-isolant-métal (MIM) et des inducteurs solénoïdes en 3D. Le filtre accordable comprend un condensateur variable hyper-abrupte (120) (varactor) à rapport d'accord de capacité élevé. Le filtre accordable comprend également un substrat de GaAs dans lequel sont formés des trous de liaison traversants de GaAs (160) (TGV). Le varactor avec les condensateurs MIM et les inducteurs en 3D (142) est formé dans une structure conductrice supérieure (150) sur la surface supérieure du substrat de GaAs. Une structure conductrice inférieure (170) comprenant des conducteurs inférieurs est formée sur la surface inférieure du substrat de GaAs. Un couplage électrique entre les structures conductrices inférieure et supérieure est assuré par les TGV. Le filtre accordable peut être intégré à des dispositifs frontaux à radiofréquence (RFFE).
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