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1. WO2022010201 - METHOD FOR PRODUCING PELLICLE FOR EXTREME ULTRAVIOLET LITHOGRAPHY

Publication Number WO/2022/010201
Publication Date 13.01.2022
International Application No. PCT/KR2021/008492
International Filing Date 05.07.2021
IPC
G03F 1/62 2012.1
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
1Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
62Pellicles or pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
G03F 1/22 2012.1
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
1Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
22Masks or mask blanks for imaging by radiation of 100 nm or shorter wavelength, e.g. X-ray masks, extreme ultra-violet masks; Preparation thereof
Applicants
  • 주식회사 에프에스티 FINE SEMITECH CORPORATION [KR]/[KR]
Inventors
  • 우란 YU, Lan
  • 조상진 CHO, Sang Jin
  • 김경수 KIM, Kyoung Soo
  • 서경원 SEO, Kyoung Won
  • 문성용 MOON, Seong Yong
  • 김지강 KIM, Ji Kang
  • 유장동 YOU, Jang Dong
Agents
  • 특허법인 다인 DYNE PATENT & LAW FIRM
Priority Data
10-2020-008486609.07.2020KR
Publication Language Korean (ko)
Filing Language Korean (KO)
Designated States
Title
(EN) METHOD FOR PRODUCING PELLICLE FOR EXTREME ULTRAVIOLET LITHOGRAPHY
(FR) PROCÉDÉ DE PRODUCTION DE PELLICULE DESTINÉE À UNE LITHOGRAPHIE EXTRÊME ULTRAVIOLET
(KO) 극자외선 리소그라피용 펠리클의 제조방법
Abstract
(EN) The present invention relates to a method for producing a pellicle for extreme ultraviolet lithography. The present invention provides a method for producing a pellicle for extreme ultraviolet lithography, the method comprising the steps of: a) forming a silicon carbide layer on one surface of a substrate; b) forming a metal catalyst layer on the silicon carbide layer; c) forming a solid carbon source layer on the metal catalyst layer; d) heat-treating so that at least a portion of the solid carbon source layer spreads to the metal catalyst layer and is supersaturated, thereby enabling a graphene layer to be formed between the silicon carbide layer and the metal catalyst layer; and e) removing the metal catalyst layer. According to the method for producing a pellicle for extreme ultraviolet lithography, according to the present invention, the graphene layer is instantly formed on the silicon carbide layer in the heat treatment process. Thus, a binding force between the silicon carbide layer and the graphene layer is improved.
(FR) La présente invention se rapporte à un procédé de production d'une pellicule destinée à une lithographie extrême ultraviolet. La présente invention concerne un procédé de production d'une pellicule destinée à une lithographie extrême ultraviolet, le procédé comprenant les étapes consistant : a) à former une couche de carbure de silicium sur une surface d'un substrat ; b) à former une couche de catalyseur métallique sur la couche de carbure de silicium ; c) à former une couche de source de carbone solide sur la couche de catalyseur métallique ; d) à effectuer un traitement thermique de sorte qu'au moins une partie de la couche de source de carbone solide s'étale sur la couche de catalyseur métallique et soit sursaturée, ce qui permet de former une couche de graphène entre la couche de carbure de silicium et la couche de catalyseur métallique ; et e) à éliminer la couche de catalyseur métallique. Selon le procédé de production d'une pellicule destinée à une lithographie extrême ultraviolet, selon la présente invention, la couche de graphène est instantanément formée sur la couche de carbure de silicium dans le processus de traitement thermique. Ainsi, une force de liaison entre la couche de carbure de silicium et la couche de graphène est améliorée.
(KO) 본 발명은 극자외선 리소그라피용 펠리클의 제조방법에 관한 것이다. 본 발명은 본 발명은 a) 기판의 일면 위에 탄화규소 층을 형성하는 단계와, b) 상기 탄화규소 층 위에 금속 촉매 층을 형성하는 단계와, c) 상기 금속 촉매 층 위에 고체 탄소 소스 층을 형성하는 단계와, d) 상기 고체 탄소 소스 층의 적어도 일부가 상기 금속 촉매 층으로 확산되면서 과포화되어 상기 탄화규소 층과 상기 금속 촉매 층 사이에 그래핀 층이 형성되도록 열처리하는 단계와, e) 상기 금속 촉매 층을 제거하는 단계를 포함하는 극자외선 리소그라피용 펠리클의 제조방법을 제공한다. 본 발명에 따른 극자외선 리소그라피용 펠리클의 제조방법에 따르면 열처리 과정에서 탄화규소 층 위에 그래핀 층이 바로 형성된다. 따라서 탄화규소 층과 그래핀 층 사이의 결합력이 개선된다.
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