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1. WO2022009970 - POWER CONVERSION CIRCUIT AND POWER CONVERSION SYSTEM

Publication Number WO/2022/009970
Publication Date 13.01.2022
International Application No. PCT/JP2021/025889
International Filing Date 09.07.2021
IPC
H01L 29/06 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02Semiconductor bodies
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/872 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
86controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated, or switched
861Diodes
872Schottky diodes
H02M 3/155 2006.1
HELECTRICITY
02GENERATION, CONVERSION, OR DISTRIBUTION OF ELECTRIC POWER
MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
3Conversion of dc power input into dc power output
02without intermediate conversion into ac
04by static converters
10using discharge tubes with control electrode or semiconductor devices with control electrode
145using devices of a triode or transistor type requiring continuous application of a control signal
155using semiconductor devices only
H02M 7/12 2006.1
HELECTRICITY
02GENERATION, CONVERSION, OR DISTRIBUTION OF ELECTRIC POWER
MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
7Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
02Conversion of ac power input into dc power output without possibility of reversal
04by static converters
12using discharge tubes with control electrode or semiconductor devices with control electrode
CPC
H01L 29/06
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; ; characterised by the concentration or distribution of impurities within semiconductor regions
H01L 29/872
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
86controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
861Diodes
872Schottky diodes
H02M 3/155
HELECTRICITY
02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
3Conversion of dc power input into dc power output
02without intermediate conversion into ac
04by static converters
10using discharge tubes with control electrode or semiconductor devices with control electrode
145using devices of a triode or transistor type requiring continuous application of a control signal
155using semiconductor devices only
H02M 7/12
HELECTRICITY
02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
7Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
02Conversion of ac power input into dc power output without possibility of reversal
04by static converters
12using discharge tubes with control electrode or semiconductor devices with control electrode
Applicants
  • 株式会社FLOSFIA FLOSFIA INC. [JP]/[JP]
Inventors
  • 北角 英人 KITAKADO Hidehito
  • 松原 佑典 MATSUBARA Yusuke
Priority Data
2020-11949510.07.2020JP
2020-11949610.07.2020JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) POWER CONVERSION CIRCUIT AND POWER CONVERSION SYSTEM
(FR) CIRCUIT ET SYSTÈME DE CONVERSION DE PUISSANCE
(JA) 電力変換回路および電力変換システム
Abstract
(EN) Provided is a power conversion circuit in which radiation noise is reduced. The power conversion circuit is provided with at least a switching element (5) for opening and closing an input voltage via a reactor (4), and a commutating diode (7) which, by means of a voltage including at least an electromotive force generated from the reactor (4) when the switching element (5) is off, allows for conduction of a current that flows in the direction of the electromotive force. The commutating diode (7) includes a gallium oxide-based Schottky barrier diode.
(FR) L'invention concerne un circuit de conversion de puissance dans lequel le bruit de rayonnement est réduit. Le circuit de conversion de puissance est pourvu d'au moins un élément de commutation (5) pour laisser passer et bloquer une tension d'entrée par l'intermédiaire d'un réacteur (4), et une diode de commutation (7) qui, au moyen d'une tension comprenant au moins une force électromotrice générée à partir du réacteur (4) lorsque l'élément de commutation (5) est hors tension, permet la conduction d'un courant qui circule dans la direction de la force électromotrice. La diode de commutation (7) comprend une diode à barrière de Schottky à base d'oxyde de gallium.
(JA) 放射ノイズの低減された電力変換回路を提供する。 電力変換回路は、入力される電圧をリアクトル(4)を介して開閉するスイッチング素子(5)と、前記スイッチング素子(5)のオフ時に前記リアクトル(4)から発生する起電力を少なくとも含む電圧によって前記起電力の方向に流れる電流を導通させる転流ダイオード(7)とを少なくとも備え、前記転流ダイオード(7)は、酸化ガリウム系ショットキーバリアダイオードを含む。
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