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1. WO2022009885 - SUBSTRATE PROCESSING MODULE AND SUBSTRATE PROCESSING APPARATUS

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Publication Number WO/2022/009885
Publication Date 13.01.2022
International Application No. PCT/JP2021/025473
International Filing Date 06.07.2021
IPC
H01L 21/304 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304Mechanical treatment, e.g. grinding, polishing, cutting
CPC
H01L 21/304
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
302to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
304Mechanical treatment, e.g. grinding, polishing, cutting
Applicants
  • 東邦化成株式会社 TOHO KASEI CO., LTD. [JP]/[JP]
Inventors
  • 出口　泰紀 DEGUCHI, Yasunori
Agents
  • 山尾　憲人 YAMAO, Norihito
  • 岡部　博史 OKABE, Hiroshi
Priority Data
PCT/JP2020/02691409.07.2020JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) SUBSTRATE PROCESSING MODULE AND SUBSTRATE PROCESSING APPARATUS
(FR) MODULE ET DISPOSITIF DE TRAITEMENT DE SUBSTRAT
(JA) 基板処理モジュールおよび基板処理装置
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Abstract
(EN) A substrate processing module (7) comprising: a first tank (34) and a second tank (32) which are arrayed in a first direction and in which a substrate (4) can be positioned; a first conveyance unit (11) that moves the substrate (4) in the first direction; a second conveyance unit (48) that moves the substrate (4) in a second direction that intersects the first direction; and a vertical conveyance unit (13) that is coupled to the first conveyance unit (11) and moves the substrate (4) vertically, wherein a first actuator (12) of the first conveyance unit (11) and a second actuator (41) of the second conveyance unit (48) are respectively positioned in drive spaces (B1, B2) that are separated from a processing space (A) where it is possible to access the first tank (34) and the second tank (32).
(FR) Le module de traitement de substrat (7) de l'invention est équipé : d'un premier réservoir (34) ainsi que d'un second réservoir (32) arrangés dans une première direction et permettant de disposer un substrat (4) ; d'une première partie convoi (11) déplaçant le substrat (4) dans la première direction ; d'une seconde partie convoi (48) déplaçant le substrat (4) dans une seconde direction sécante à la première direction ; d'une partie convoi verticale (13) reliée à la première partie convoi (11), et déplaçant verticalement le substrat (4). Un premier actionneur (12) de la première partie convoi (11) et un second actionneur (41) de la seconde partie convoi (48), sont disposés respectivement dans des espaces d'entraînement (B1, B2) séparés d'un espace de traitement (A) permettant l'accès au premier réservoir (34) et au second réservoir (32).
(JA) 基板処理モジュール（７）は、第１方向に配列され、基板（４）を配置可能な第１槽（３４）および第２槽（３２）と、基板（４）を第１方向に移動させる第１搬送部（１１）と、基板（４）を第１方向に交差する第２方向に移動させる第２搬送部（４８）と、第１搬送部（１１）に連結され、基板（４）を上下動させる上下搬送部（１３）と、を備え、第１搬送部（１１）の第１アクチュエータ（１２）および第２搬送部（４８）の第２アクチュエータ（４１）は、第１槽（３４）と第２槽（３２）にアクセス可能な処理スペース（Ａ）とは隔離された駆動スペース（Ｂ１、Ｂ２）にそれぞれ配置される。
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