Processing

Please wait...

Settings

Settings

Goto Application

1. WO2022009695 - ALKOXIDE COMPOUND, THIN FILM-FORMING MATERIAL, AND METHOD FOR MANUFACTURING THIN FILM

Publication Number WO/2022/009695
Publication Date 13.01.2022
International Application No. PCT/JP2021/024110
International Filing Date 25.06.2021
IPC
C07C 215/08 2006.1
CCHEMISTRY; METALLURGY
07ORGANIC CHEMISTRY
CACYCLIC OR CARBOCYCLIC COMPOUNDS
215Compounds containing amino and hydroxy groups bound to the same carbon skeleton
02having hydroxy groups and amino groups bound to acyclic carbon atoms of the same carbon skeleton
04the carbon skeleton being saturated
06and acyclic
08with only one hydroxy group and one amino group bound to the carbon skeleton
C07F 1/08 2006.1
CCHEMISTRY; METALLURGY
07ORGANIC CHEMISTRY
FACYCLIC, CARBOCYCLIC, OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
1Compounds containing elements of Groups 1 or 11 of the Periodic System
08Copper compounds
C07F 15/04 2006.1
CCHEMISTRY; METALLURGY
07ORGANIC CHEMISTRY
FACYCLIC, CARBOCYCLIC, OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
15Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic System
04Nickel compounds
C07F 15/06 2006.1
CCHEMISTRY; METALLURGY
07ORGANIC CHEMISTRY
FACYCLIC, CARBOCYCLIC, OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
15Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic System
06Cobalt compounds
C07F 7/22 2006.1
CCHEMISTRY; METALLURGY
07ORGANIC CHEMISTRY
FACYCLIC, CARBOCYCLIC, OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
7Compounds containing elements of Groups 4 or 14 of the Periodic System
22Tin compounds
C23C 16/18 2006.1
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
06characterised by the deposition of metallic material
18from metallo-organic compounds
Applicants
  • 株式会社ADEKA ADEKA CORPORATION [JP]/[JP]
Inventors
  • 桜井 淳 SAKURAI, Atsushi
  • 畑▲瀬▼ 雅子 HATASE, Masako
  • 岡田 奈奈 OKADA, Nana
  • 福島 亮太 FUKUSHIMA, Ryota
Agents
  • 曾我 道治 SOGA, Michiharu
  • 梶並 順 KAJINAMI, Jun
  • 大宅 一宏 OYA, Kazuhiro
Priority Data
2020-11813309.07.2020JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) ALKOXIDE COMPOUND, THIN FILM-FORMING MATERIAL, AND METHOD FOR MANUFACTURING THIN FILM
(FR) COMPOSÉ ALCOXYDE, MATÉRIAU DE FORMATION DE COUCHE MINCE ET PROCÉDÉ DE FABRICATION DE COUCHE MINCE
(JA) アルコキシド化合物、薄膜形成用原料及び薄膜の製造方法
Abstract
(EN) The present invention provides: an alkoxide compound represented by general formula (1); a thin film-forming material containing said compound; and a method for manufacturing a thin film. (In the formula, R1 and R2 each independently represent a hydrogen atom, an alkyl group having 1-5 carbon atoms, or a fluorine atom-containing alkyl group having 1-5 carbon atoms, R3 and R4 each independently represent an alkyl group having 1-5 carbon atoms or a fluorine atom-containing alkyl group having 1-5 carbon atoms, R5 represents a hydrogen atom, a group containing a fluorine atom, or an alkyl group having 1-5 carbon atoms, R6 represents a group containing a fluorine atom, M represents a metal atom or a semimetal atom, and n represents the valence of an atom represented by M. However, if M is a copper atom, R3 and R4 each independently represent an alkyl group having 1-2 carbon atoms, and R5 represents a hydrogen atom.)
(FR) La présente invention concerne : un composé alcoxyde représenté par la formule générale (1) ; un matériau de formation de couche mince contenant ledit composé ; et un procédé de fabrication d'une couche mince. (Dans la formule, R1 et R2 représentent chacun indépendamment un atome d'hydrogène, un groupe alkyle ayant de 1 à 5 atomes de carbone, ou un groupe alkyle contenant un atome de fluor ayant de 1 à 5 atomes de carbone, R3 et R4 représentent chacun indépendamment un groupe alkyle ayant de 1 à 5 atomes de carbone ou un groupe alkyle contenant un atome de fluor ayant de 1 à 5 atomes de carbone, R5 représente un atome d'hydrogène, un groupe contenant un atome de fluor, ou un groupe alkyle ayant de 1 à 5 atomes de carbone, R6 représente un groupe contenant un atome de fluor, M représente un atome de métal ou un atome de semi-métal, et n représente la valence d'un atome représenté par M. Cependant, si M est un atome de cuivre, R3 et R4 représentent chacun indépendamment un groupe alkyle ayant de 1 à 2 atomes de carbone, et R5 représente un atome d'hydrogène.)
(JA) 本発明は、下記一般式(1)で表されるアルコキシド化合物、該化合物を含む薄膜形成用材料及び薄膜の製造方法を提供する。 (式中、R1及びR2は、各々、独立に、水素原子、炭素原子数1~5のアルキル基又は、炭素原子数1~5のフッ素原子含有アルキル基を表し、R3及びR4は、各々、独立に、炭素原子数1~5のアルキル基又は、炭素原子数1~5のフッ素原子含有アルキル基を表し、R5は水素原子、フッ素原子を含有する基又は炭素原子数1~5のアルキル基を表し、R6はフッ素原子を含有する基を表し、Mは、金属原子又は半金属原子を表し、nは、Mで表される原子の価数を表す。但し、Mが銅原子である場合、R3及びR4は、各々、独立に、炭素原子数1~2のアルキル基を表し、R5は水素原子を表す。)
Latest bibliographic data on file with the International Bureau