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1. WO2022009693 - SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING SAME

Publication Number WO/2022/009693
Publication Date 13.01.2022
International Application No. PCT/JP2021/024097
International Filing Date 25.06.2021
IPC
G02B 1/11 2015.1
GPHYSICS
02OPTICS
BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
1Optical elements characterised by the material of which they are made; Optical coatings for optical elements
10Optical coatings produced by application to, or surface treatment of, optical elements
11Anti-reflection coatings
H01L 27/146 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
H04N 5/335 2011.1
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
30Transforming light or analogous information into electric information
335using solid-state image sensors
Applicants
  • ソニーセミコンダクタソリューションズ株式会社 SONY SEMICONDUCTOR SOLUTIONS CORPORATION [JP]/[JP]
Inventors
  • 藤井 宣年 FUJII Nobutoshi
  • 齋藤 卓 SAITO Suguru
  • 深谷 天 FUKATANI Takashi
Agents
  • 西川 孝 NISHIKAWA Takashi
  • 稲本 義雄 INAMOTO Yoshio
  • 三浦 勇介 MIURA Yusuke
Priority Data
2020-11829109.07.2020JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING SAME
(FR) DISPOSITIF D'IMAGERIE À SEMI-CONDUCTEUR ET SON PROCÉDÉ DE FABRICATION
(JA) 固体撮像装置およびその製造方法
Abstract
(EN) The present art relates to a solid-state imaging device that is able to suppress the occurrence of flares, and a method for manufacturing the same. The solid-state imaging device comprises a semiconductor substrate having formed thereon a pixel region in which a plurality of pixels are disposed, and a transparent structural body having a hollow structure and joined by a resin to a light incident surface-side of the semiconductor substrate. In the solid-state imaging device, the transparent structural body includes a glass substrate and a transparent film, and the hollow structure is formed between the glass substrate and the transparent film. The present art can be applied to, for example, an imaging device.
(FR) La présente invention concerne un dispositif d'imagerie à semi-conducteurs qui est capable de supprimer l'apparition de fusées éclairantes, et son procédé de fabrication. Le dispositif d'imagerie à semi-conducteurs comprend un substrat semi-conducteur sur lequel sont formés une région de pixels dans laquelle une pluralité de pixels sont disposés, et un corps structural transparent ayant une structure creuse et relié par une résine à un côté de surface d'incidence de lumière du substrat semi-conducteur. Dans le dispositif d'imagerie à semi-conducteurs, le corps structural transparent comprend un substrat en verre et un film transparent, et la structure creuse est formée entre le substrat en verre et le film transparent. L'état de la technique peut être appliquer à, par exemple, un dispositif d'imagerie.
(JA) 本技術は、フレアの発生を抑制することができるようにする固体撮像装置およびその製造方法に関する。 本技術の固体撮像装置は、複数の画素が配置された画素領域が形成された半導体基板と、半導体基板の光入射面側と樹脂で接合され、中空構造を有する透明構造体とを備える。本技術の固体撮像装置において、透明構造体は、ガラス基板と透明膜とを含み、中空構造は、ガラス基板と透明膜との間に形成される。本技術は、例えば、撮像装置に適用することができる。
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