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1. WO2022009573 - IMAGING DEVICE AND IMAGING METHOD

Publication Number WO/2022/009573
Publication Date 13.01.2022
International Application No. PCT/JP2021/021227
International Filing Date 03.06.2021
IPC
H04N 5/3745 2011.1
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
30Transforming light or analogous information into electric information
335using solid-state image sensors
369SSIS architecture; Circuitry associated therewith
374Addressed sensors, e.g. MOS or CMOS sensors
3745having additional components embedded within a pixel or connected to a group of pixels within a sensor matrix, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
H01L 27/146 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
H04N 5/374 2011.1
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
30Transforming light or analogous information into electric information
335using solid-state image sensors
369SSIS architecture; Circuitry associated therewith
374Addressed sensors, e.g. MOS or CMOS sensors
CPC
H01L 27/146
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
H04N 5/374
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
30Transforming light or analogous information into electric information
335using solid-state image sensors [SSIS]
369SSIS architecture; Circuitry associated therewith
374Addressed sensors, e.g. MOS or CMOS sensors
H04N 5/3745
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
30Transforming light or analogous information into electric information
335using solid-state image sensors [SSIS]
369SSIS architecture; Circuitry associated therewith
374Addressed sensors, e.g. MOS or CMOS sensors
3745having additional components embedded within a pixel or connected to a group of pixels within a sensor matrix, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
Applicants
  • ソニーセミコンダクタソリューションズ株式会社 SONY SEMICONDUCTOR SOLUTIONS CORPORATION [JP]/[JP]
Inventors
  • 北野 伸 KITANO Shin
Agents
  • 中村 行孝 NAKAMURA Yukitaka
  • 宮嶋 学 MIYAJIMA Manabu
Priority Data
2020-11863909.07.2020JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) IMAGING DEVICE AND IMAGING METHOD
(FR) DISPOSITIF D'IMAGERIE ET PROCÉDÉ D'IMAGERIE
(JA) 撮像装置及び撮像方法
Abstract
(EN) [Problem] To improve device in-the-dark properties without complicating the device structure. [Solution] An imaging device comprising: a photoelectric conversion unit that generates an electric charge according to the amount of received light; an electric-charge transfer region that is disposed at a location in the substrate interior unexposed to the surface of the substrate and in contact with the photoelectric conversion unit, the electric charge generated in the photoelectric conversion unit being transferred to the electric-charge transfer region; an electric-charge storage region that is disposed spaced apart from the electric-charge transfer region in the direction toward the substrate surface, and in which the electric charge transferred from the electric-charge transfer region is stored; a transistor that performs a control whereby the electric charge is transferred from the electric-charge transfer region to the electric-charge storage region; and a detection unit that outputs a detection signal indicating whether the absolute value of electric signal variance according to the quantity of electric charge transferred by the transistor has exceeded a predetermined threshold.
(FR) La présente invention a pour objet d'améliorer les propriétés dans l'obscurité d'un dispositif sans compliquer la structure du dispositif. À cet effet, l'invention concerne un dispositif d'imagerie comprenant : une unité de conversion photoélectrique qui génère une charge électrique en fonction de la quantité de lumière reçue ; une région de transfert de charge électrique qui est disposée à un emplacement dans l'intérieur de substrat non exposé à la surface du substrat et en contact avec l'unité de conversion photoélectrique, la charge électrique générée dans l'unité de conversion photoélectrique étant transférée à la région de transfert de charge électrique ; une région de stockage de charge électrique qui est disposée à distance de la région de transfert de charge électrique dans la direction vers la surface du substrat, et dans laquelle la charge électrique transférée depuis la région de transfert de charge électrique est stockée ; un transistor qui réalise une commande par laquelle la charge électrique est transférée de la région de transfert de charge électrique à la région de stockage de charge électrique ; et une unité de détection qui délivre en sortie un signal de détection indiquant si la valeur absolue de la variance de signal électrique en fonction de la quantité de charge électrique transférée par le transistor a dépassé un seuil prédéterminé.
(JA) [課題]デバイス構造を複雑化せずに暗時の特性を向上させる。 [解決手段]撮像装置は、受光量に応じた電荷を生成する光電変換部と、基板表面に露出されない基板内部の前記光電変換部に接する場所に配置され、前記光電変換部で生成された前記電荷が転送される電荷転送領域と、前記電荷転送領域から基板面方向に離隔して配置され、前記電荷転送領域から転送された前記電荷を蓄積する電荷蓄積領域と、前記電荷転送領域から前記電荷蓄積領域に前記電荷を転送する制御を行うトランジスタと、前記トランジスタで転送する前記電荷の量に応じた電気信号の変化量の絶対値が所定の閾値を超えたか否かを示す検出信号を出力する検出部と、を備える。
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