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1. WO2022009557 - SEMICONDUCTOR DEVICE AND SEMICONDUCTOR CHIP

Publication Number WO/2022/009557
Publication Date 13.01.2022
International Application No. PCT/JP2021/020532
International Filing Date 28.05.2021
IPC
H01L 25/07 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices
03all the devices being of a type provided for in the same subgroup of groups H01L27/-H01L51/128
04the devices not having separate containers
07the devices being of a type provided for in group H01L29/78
H01L 25/18 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices
18the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/-H01L51/160
H01L 21/60 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/06-H01L21/326162
60Attaching leads or other conductive members, to be used for carrying current to or from the device in operation
CPC
H01L 21/50
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, ; e.g. sealing of a cap to a base of a container
H01L 2224/0603
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
02Bonding areas; Manufacturing methods related thereto
04Structure, shape, material or disposition of the bonding areas prior to the connecting process
06of a plurality of bonding areas
0601Structure
0603Bonding areas having different sizes, e.g. different heights or widths
H01L 2224/48137
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
47Structure, shape, material or disposition of the wire connectors after the connecting process
48of an individual wire connector
481Disposition
48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
48137the bodies being arranged next to each other, e.g. on a common substrate
H01L 2224/48139
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
47Structure, shape, material or disposition of the wire connectors after the connecting process
48of an individual wire connector
481Disposition
48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
48137the bodies being arranged next to each other, e.g. on a common substrate
48139with an intermediate bond, e.g. continuous wire daisy chain
H01L 2224/48227
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
47Structure, shape, material or disposition of the wire connectors after the connecting process
48of an individual wire connector
481Disposition
48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
48221the body and the item being stacked
48225the item being non-metallic, e.g. insulating substrate with or without metallisation
48227connecting the wire to a bond pad of the item
H01L 2224/4846
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
47Structure, shape, material or disposition of the wire connectors after the connecting process
48of an individual wire connector
484Connecting portions
4846with multiple bonds on the same bonding area
Applicants
  • 富士電機株式会社 FUJI ELECTRIC CO., LTD. [JP]/[JP]
Inventors
  • 山野 彰生 YAMANO, Akio
Agents
  • 特許業務法人扶桑国際特許事務所 FUSO INTERNATIONAL PATENT FIRM
Priority Data
2020-11938810.07.2020JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) SEMICONDUCTOR DEVICE AND SEMICONDUCTOR CHIP
(FR) DISPOSITIF À SEMI-CONDUCTEURS, ET PUCES SEMI-CONDUCTRICES
(JA) 半導体装置及び半導体チップ
Abstract
(EN) The present invention suppresses tilting of a bonding wire. In a semiconductor unit (20), each of semiconductor chips (25 to 28) has gate electrodes (25a1 to 25a4, 26a1 to 26a4, 27a1 to 27a4, 28a1 to 28a4) disposed at the corners of an upper surface thereof. Further, a bonding wire (29b) connects a gate electrode (25a4) on the semiconductor chip (26) side and a gate electrode (26a2) on the semiconductor chip (25) side. A bonding wire (29f) connects a gate electrode (28a1) on the semiconductor chip (27) side and a gate electrode (27a3) on the semiconductor chip (28) side.
(FR) Selon l'invention, l'effondrement de fils de connexion, est peu susceptible de se produire. Dans une unité de semi-conducteurs (20), des puces semi-conductrices (25 à 28) sont telles que des électrodes de grille (25a1 à 25a4, 26a1 à 26a4, 27a1 à 27a4, 28a1 à 28a4) sont chacune agencées au niveau de parties angle d'une face avant. Un fil de connexion (29b) connecte l'électrode de grille (25a4) côté puce semi-conductrices (26), et l'électrode de grille (26a2) côté puce semi-conductrices (25). Un fil de connexion (29f) connecte l'électrode de grille (28a1) côté puce semi-conductrices (27), et l'électrode de grille (27a3) côté puce semi-conductrices (28).
(JA) ボンディングワイヤの傾倒の発生を抑制する。 半導体ユニット(20)では、半導体チップ(25~28)は、おもて面の角部にそれぞれゲート電極(25a1~25a4,26a1~26a4,27a1~27a4,28a1~28a4)が設けられている。この際、ボンディングワイヤ(29b)が半導体チップ(26)側のゲート電極(25a4)と半導体チップ(25)側のゲート電極(26a2)とを接続する。ボンディングワイヤ(29f)が半導体チップ(27)側のゲート電極(28a1)と半導体チップ(28)側のゲート電極(27a3)との間を接続する。
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