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1. WO2022009536 - SPUTTERING APPARATUS AND SPUTTERING FILM FORMING METHOD

Publication Number WO/2022/009536
Publication Date 13.01.2022
International Application No. PCT/JP2021/019306
International Filing Date 21.05.2021
IPC
C23C 14/34 2006.1
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
34Sputtering
C23C 14/35 2006.1
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
34Sputtering
35by application of a magnetic field, e.g. magnetron sputtering
H05H 1/46 2006.1
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY- CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
1Generating plasma; Handling plasma
24Generating plasma
46using applied electromagnetic fields, e.g. high frequency or microwave energy
Applicants
  • ソニーグループ株式会社 SONY GROUP CORPORATION [JP]/[JP]
Inventors
  • 下田 和人 SHIMODA Kazuhito
  • 佐々木 純 SASAKI Jun
Agents
  • 渡邊 薫 WATANABE Kaoru
Priority Data
2020-11708407.07.2020JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) SPUTTERING APPARATUS AND SPUTTERING FILM FORMING METHOD
(FR) APPAREIL DE PULVÉRISATION CATHODIQUE ET PROCÉDÉ DE FORMATION DE FILM PAR PULVÉRISATION CATHODIQUE
(JA) スパッタリング装置およびスパッタリング成膜方法
Abstract
(EN) To form a film at high speed and generate a high quality thin film with high adhesion. A sputtering device 100 comprises: a pair of cathodes 101, 102 in which the surfaces thereof are coated with a target material 109 and which are disposed to face each other; a pair of magnetic field generators 103, 104 which are respectively disposed inside the pair of cathodes 101, 102 and generate a magnetic field; a gas supply part 105 which supplies gas in an intermediate flow region, which is a transition region between a viscous flow and molecular flow, between the pair of cathodes 101, 102; and a gas blocking part 106 that blocks gas supplied from the gas supply part 105 from diffusing from between the pair of cathodes 101, 102 to the surroundings, wherein a film is formed on the surface of a film 113.
(FR) L'invention a pour objet de former un film à grande vitesse et de générer un film mince de haute qualité présentant une adhérence élevée. Un dispositif de pulvérisation cathodique (100) comprend : une paire de cathodes (101, 102) dont les surfaces sont revêtues d'un matériau cible (109) et qui sont disposées de façon à se faire face ; une paire de générateurs de champ magnétique (103, 104) qui sont respectivement disposés à l'intérieur de la paire de cathodes et génèrent un champ magnétique ; une partie apport de gaz (105) qui apporte du gaz dans une région d'écoulement intermédiaire, qui est une région de transition entre un écoulement visqueux et un écoulement moléculaire, entre la paire de cathodes ; et une partie blocage de gaz (106) qui empêche le gaz apporté par la partie apport de gaz (105) de se diffuser dans l'environnement à partir de la paire de cathodes (101, 102), un film étant formé sur la surface d'un film (113).
(JA) 高速度で成膜するとともに、高品質で密着性の高い薄膜を生成すること。 スパッタリング装置100は、表面がターゲット材料109で被覆され、互いに対向配置された一対のカソード101、102と、一対のカソード101、102のそれぞれの内部に配置され、磁場を発生させる一対の磁場発生部103、104と、一対のカソード101、102の間に、粘性流と分子流との遷移領域である中間流領域のガスを供給するガス供給部105と、ガス供給部105から供給されるガスが、一対のカソード101、102の間から周囲に拡散するのを遮断するガス遮断部106と、を備え、フィルム113の表面に成膜する。
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