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1. WO2022009482 - POWER SEMICONDUCTOR MODULE AND POWER CONVERSION DEVICE

Publication Number WO/2022/009482
Publication Date 13.01.2022
International Application No. PCT/JP2021/011484
International Filing Date 19.03.2021
IPC
H01L 25/07 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices
03all the devices being of a type provided for in the same subgroup of groups H01L27/-H01L51/128
04the devices not having separate containers
07the devices being of a type provided for in group H01L29/78
H01L 25/18 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices
18the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/-H01L51/160
H02M 7/48 2007.1
HELECTRICITY
02GENERATION, CONVERSION, OR DISTRIBUTION OF ELECTRIC POWER
MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
7Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
42Conversion of dc power input into ac power output without possibility of reversal
44by static converters
48using discharge tubes with control electrode or semiconductor devices with control electrode
Applicants
  • 三菱電機株式会社 MITSUBISHI ELECTRIC CORPORATION [JP]/[JP]
Inventors
  • 岡田 一也 OKADA, Kazuya
  • 岡 誠次 OKA, Seiji
  • 森崎 翔太 MORISAKI, Shota
Agents
  • 特許業務法人深見特許事務所 FUKAMI PATENT OFFICE, P.C.
Priority Data
2020-11764408.07.2020JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) POWER SEMICONDUCTOR MODULE AND POWER CONVERSION DEVICE
(FR) MODULE SEMICONDUCTEUR DE PUISSANCE ET DISPOSITIF DE CONVERSION DE PUISSANCE
(JA) パワー半導体モジュール及び電力変換装置
Abstract
(EN) A power semiconductor module (1) equipped with a power semiconductor element (20a), a power semiconductor element (20c) and a printed circuit board (30). The printed circuit board (30) comprises an insulating substrate (31), a first emitter conductor pattern (33) provided on a main surface (31a) of the insulating substrate (31), and a first gate conductor pattern (36) provided on a main surface (31b) of the insulating substrate (31). The first gate conductor pattern (36) is positioned along a first edge (33a) of the first emitter conductor pattern (33) when seen from a planar view of the main surface (31b) of the insulating substrate (31).
(FR) L'invention porte sur un module semi-conducteur de puissance (1) équipé d'un élément semi-conducteur de puissance (20a), sur un élément semi-conducteur de puissance (20c) et sur une carte de circuit imprimé (30). La carte de circuit imprimé (30) comprend un substrat isolant (31), un premier motif conducteur d'émetteur (33) disposé sur une surface principale (31a) du substrat isolant (31), et un premier motif conducteur de grille (36) disposé sur une surface principale (31b) du substrat isolant (31). Le premier motif conducteur de grille (36) est positionné le long d'un premier bord (33a) du premier motif conducteur d'émetteur (33) lorsqu'il est vu depuis une vue en plan de la surface principale (31b) du substrat isolant (31).
(JA) パワー半導体モジュール(1)は、パワー半導体素子(20a)と、パワー半導体素子(20c)と、プリント配線基板(30)とを備える。プリント配線基板(30)は、絶縁基板(31)と、絶縁基板(31)の主面(31a)上に設けられている第1エミッタ導電パターン(33)と、絶縁基板(31)の主面(31b)上に設けられている第1ゲート導電パターン(36)とを含む。第1ゲート導電パターン(36)は、絶縁基板(31)の主面(31b)の平面視において第1エミッタ導電パターン(33)の第1縁(33a)に沿って配置されている。
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