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1. WO2022009451 - POLYMER FILM RELEASING METHOD, ELECTRONIC DEVICE PRODUCTION METHOD, AND RELEASING DEVICE

Publication Number WO/2022/009451
Publication Date 13.01.2022
International Application No. PCT/JP2021/000071
International Filing Date 05.01.2021
IPC
B65H 41/00 2006.1
BPERFORMING OPERATIONS; TRANSPORTING
65CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
HHANDLING THIN OR FILAMENTARY MATERIAL, e.g. SHEETS, WEBS, CABLES
41Machines for separating superposed webs
H01L 21/02 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/336 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334Multistep processes for the manufacture of devices of the unipolar type
335Field-effect transistors
336with an insulated gate
H01L 29/786 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
786Thin-film transistors
B32B 7/06 2019.1
BPERFORMING OPERATIONS; TRANSPORTING
32LAYERED PRODUCTS
BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
7Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
04Interconnection of layers
06permitting easy separation
B32B 38/10 2006.1
BPERFORMING OPERATIONS; TRANSPORTING
32LAYERED PRODUCTS
BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
38Ancillary operations in connection with laminating processes
10Removing layers, or parts of layers, mechanically or chemically
CPC
B32B 38/10
BPERFORMING OPERATIONS; TRANSPORTING
32LAYERED PRODUCTS
BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
38Ancillary operations in connection with laminating processes
10Removing layers, or parts of layers, mechanically or chemically
B32B 7/06
BPERFORMING OPERATIONS; TRANSPORTING
32LAYERED PRODUCTS
BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
7Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
04Interconnection of layers
06permitting easy separation
B65H 41/00
BPERFORMING OPERATIONS; TRANSPORTING
65CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
HHANDLING THIN OR FILAMENTARY MATERIAL, e.g. SHEETS, WEBS, CABLES
41Machines for separating superposed webs
H01L 21/02
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
H01L 29/66477
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
66007Multistep manufacturing processes
66075of devices having semiconductor bodies comprising group 14 or group 13/15 materials
66227the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
66409Unipolar field-effect transistors
66477with an insulated gate, i.e. MISFET
H01L 29/786
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
786Thin film transistors, ; i.e. transistors with a channel being at least partly a thin film
Applicants
  • 東洋紡株式会社 TOYOBO CO., LTD. [JP]/[JP]
Inventors
  • 奥山 哲雄 OKUYAMA,Tetsuo
  • 鶴野 吉拡 TSURUNO,Yoshihiro
Agents
  • 特許業務法人 ユニアス国際特許事務所 UNIUS PATENT ATTORNEYS OFFICE
Priority Data
2020-11641006.07.2020JP
2020-11990213.07.2020JP
2020-14043821.08.2020JP
2020-16883106.10.2020JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) POLYMER FILM RELEASING METHOD, ELECTRONIC DEVICE PRODUCTION METHOD, AND RELEASING DEVICE
(FR) PROCÉDÉ DE LIBÉRATION DE FILM POLYMÈRE, PROCÉDÉ DE FABRICATION DE DISPOSITIF ÉLECTRONIQUE ET SUPPORT DE LIBÉRATION
(JA) 高分子フィルムの剥離方法、電子デバイスの製造方法、及び、剥離装置
Abstract
(EN) This polymer film releasing method includes the step A of preparing a layered body comprising an inorganic substrate in tight contact with a polymer film having formed thereon a circuit pattern and/or a functional element, the step B of forming, at an end portion of the layered body, a release portion between the polymer film and the inorganic substrate, and the step C of warping the inorganic substrate in the direction of separation from the polymer film, thereby causing the polymer film to be released from the inorganic substrate while being kept approximately flat.
(FR) La présente invention concerne un procédé de libération d'un film polymère comprenant l'étape A, consistant à préparer un corps stratifié comprenant un substrat inorganique en contact étroit avec un film polymère sur lequel est formé un tracé de circuit et/ou un élément fonctionnel, l'étape B, consistant à former, sur une extrémité du corps stratifié, une partie de libération entre le film polymère et le substrat inorganique, et l'étape C, consistant à déformer le substrat inorganique dans la direction de séparation à partir du film polymère, afin de libérer le film polymère du substrat inorganique tout en le maintenant approximativement plat.
(JA) 回路パターン及び/又は機能素子が形成された高分子フィルムと無機基板とが密着した積層体を準備する工程Aと、積層体の端部において、高分子フィルムと無機基板との間に剥離部分を形成する工程Bと、無機基板が高分子フィルムと離れる方向に反ることにより、高分子フィルムを略平面に保ったまま無機基板から剥離する工程Cとを含む高分子フィルムの剥離方法。
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